High voltage 500V MOSFET OSEN OSD9N50C N Channel with improved dvdt and power dissipation of 60 watts
Key Attributes
Model Number:
OSD9N50C
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
9A
RDS(on):
680mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
35pF
Input Capacitance(Ciss):
1.505nF
Output Capacitance(Coss):
60pF
Pd - Power Dissipation:
60W
Gate Charge(Qg):
56nC@10V
Mfr. Part #:
OSD9N50C
Package:
TO-252
Product Description
OSD9N50C 500V N-CHANNEL MOSFET
The OSD9N50C is a 500V N-Channel MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive, and improved dv/dt capability for enhanced ruggedness. This MOSFET is suitable for use in high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Publication Order Number: OSD9N50C
- Revision: Rev 21.2.10
- Package: TO-252
Technical Specifications
| Symbol | Parameters | Ratings | Unit | Conditions |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| VDSS | Drain-Source Voltage | 500 | V | |
| VGS | Gate-Source Voltage-Continuous | 30 | V | |
| ID | Drain Current-Continuous (Note 2) | 9 | A | |
| IDM | Drain Current-Single Plused (Note 1) | 55 | A | |
| PD | Power Dissipation (Note 2) | 60 | W | |
| Tj Max. | Operating junction temperature | 150 | ||
| Electrical Characteristics | ||||
| BVDSS | Drain-Source Breakdown Voltage Current (Note 1) | 500 | V | ID=250AVGS=0VTJ=25C |
| VGS(th) | Gate Threshold Voltage | 2.0 -- 4.0 | V | VDS=VGSID=250A |
| RDS(on) | Drain-Source On-Resistance | -- 0.68 -- | VGS=10VID=4.5A | |
| IGSS | Gate-Body Leakage Current | -- -- 100 | nA | VGS=30VVDS=0 |
| IDSS | Zero Gate Voltage Drain Current | -- -- 1 | A | VDS=500VVGS=0 |
| Switching Characteristics | ||||
| Td(on) | Turn-On Delay Time | -- 13.6 37.2 | ns | VDS=250VID=9ARG=25Note 2 |
| Tr | Rise Time | -- 9.1 28.2 | ns | |
| Td(off) | Turn-Off Delay Time | -- 42 94 | ns | |
| Tf | Fall Time | -- 10 30 | ns | |
| Qg | Total Gate Charge | -- 43 56 | nC | VDS=400V,VGS=10V ID=9ANote 2 |
| Qgs | Gate-Source Charge | -- 7.5 -- | nC | |
| Qgd | Gate-Drain Charge | -- 18.5 -- | nC | |
| Dynamic Characteristics | ||||
| Ciss | Input Capacitance | -- 1130 1505 | pF | VDS=25VVGS=0f=1MHz |
| Coss | Output Capacitance | -- 45 60 | pF | |
| Crss | Reverse Transfer Capacitance | -- 20 35 | pF | |
| IS | Continuous Drain-Source Diode Forward Current (Note 2) | -- -- 9 | A | |
| VSD | Diode Forward On-Voltage | -- -- 1.4 | V | IS=9AVGS=0 |
| Rth(j-c) | Thermal Resistance, Junction to Case | -- -- 2.08 | /W | |
Notes:
Note 1: Repetitive Rating : Pulse width limited by maximum junction temperature.
Note 2: Pulse test: PW <= 300us , duty cycle <= 2%.
2410121732_OSEN-OSD9N50C_C20607788.pdf
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