100V Drain Source Voltage MOSFET PJSEMI PJM10H02NSC for Uninterruptible Power Supplies and Switching
Key Attributes
Model Number:
PJM10H02NSC
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
240mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
13pF
Number:
1 N-channel
Output Capacitance(Coss):
22pF
Pd - Power Dissipation:
1W
Input Capacitance(Ciss):
190pF
Gate Charge(Qg):
5.2nC@10V
Mfr. Part #:
PJM10H02NSC
Package:
SOT-23-3
Product Description
Product Overview
The PJM10H02NSC is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It is designed for power switching applications and uninterruptible power supplies. This RoHS and Reach compliant component is halogen and antimony free, offering a VDS of 100V and an ID of 2A, with a low RDS(on) of less than 240m at VGS=10V.
Product Attributes
- Brand: PingJingSemi
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | 2 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 5 | A | ||
| Maximum Power Dissipation | PD | 1.0 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Thermal Resistance,Junction-to-Ambient | RJA | Note2 | 125 | C/W | ||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 100 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | Note3, VDS=VGS,ID=250A | 1.2 | 1.8 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=10V,ID=1A | -- | 210 | 240 | m |
| Forward Transconductance | gFS | Note3, VDS=5V,ID=1A | 1 | -- | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V,VGS=0V,f=1MHz | -- | 190 | -- | pF |
| Output Capacitance | Coss | VDS=50V,VGS=0V,f=1MHz | -- | 22 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=50V,VGS=0V,f=1MHz | -- | 13 | -- | pF |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=50V,ID=1.3A,RL=39,VGS=10V,RGEN=1 | -- | 6 | -- | nS |
| Turn-on Rise Time | tr | VDD=50V,ID=1.3A,RL=39,VGS=10V,RGEN=1 | -- | 10 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=50V,ID=1.3A,RL=39,VGS=10V,RGEN=1 | -- | 10 | -- | nS |
| Turn-off Fall Time | tf | VDD=50V,ID=1.3A,RL=39,VGS=10V,RGEN=1 | -- | 6 | -- | nS |
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=50V,ID=1.3A, VGS=10V | -- | 5.2 | -- | nC |
| Gate-Source Charge | Qgs | VDS=50V,ID=1.3A, VGS=10V | -- | 0.75 | -- | nC |
| Gate-Drain Charge | Qg d | VDS=50V,ID=1.3A, VGS=10V | -- | 1.4 | -- | nC |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3, VGS=0V,IS=1.3A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | Note2 | -- | -- | 2 | A |
2411121111_PJSEMI-PJM10H02NSC_C41413546.pdf
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