200V N Channel MOSFET OSEN OSH50N20 Suitable for High Current and High Power Dissipation Applications
Key Attributes
Model Number:
OSH50N20
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
50A
RDS(on):
38mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
160pF
Output Capacitance(Coss):
690pF
Input Capacitance(Ciss):
4.3nF
Pd - Power Dissipation:
300W
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
OSH50N20
Package:
TO-3PNB
Product Description
Product Overview
The OSH50N20 is a 200V N-Channel MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive capability, and improved dv/dt capability with high ruggedness. This MOSFET is ideal for use in high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Origin: http://www.osen.net.cn
- Publication Order Number: [OSH50N20]
- Revision: Rev 21.2.10
- Package Type: TO-3PNB
Technical Specifications
| Parameters | Symbol | Ratings | Unit | Conditions |
| Drain-Source Voltage | VDSS | 200 | V | |
| Gate-Source Voltage-Continuous | VGS | 20 | V | |
| Drain Current-Continuous (Note 2) | ID | 50 | A | |
| Drain Current-Single Pulsed (Note 1) | IDM | 200 | A | |
| Power Dissipation (Note 2) | PD | 300 | W | |
| Max.Operating junction temperature | Tj | 150 | ||
| Drain-Source Breakdown Voltage Current (Note 1) | BVDSS | 200 | V | ID=250A VGS=0VTJ=25C |
| Gate Threshold Voltage | VGS(th) | 2 -- 4.0 | V | VDS=VGSID=250A |
| Drain-Source On-Resistance | RDS(on) | -- 30 38 | m | VGS=10VID=25A |
| Gate-Body Leakage Current | IGSS | -- 100 | nA | VGS=20VVDS=0 |
| Zero Gate Voltage Drain Current | IDSS | -- 1 | A | VDS=200VVGS=0 |
| Forward Transconductance | gfs | -- 65 -- | S | VDS=15VID=20A |
| Turn-On Delay Time | Tdon | -- 32 -- | ns | VDS=100VID=25A RG=10Note 2 |
| Rise Time | Tr | -- 35 -- | ns | |
| Turn-Off Delay Time | Tdoff | -- 70 -- | ns | |
| Fall Time | Tf | -- 20 -- | ns | |
| Total Gate Charge | Qg | -- 45 -- | nC | VDS=100V VGS=10V ID=25ANote 2 |
| Gate-Source Charge | Qgs | -- 10 -- | nC | |
| Gate-Drain Charge | Qgd | -- 15 -- | nC | |
| Input Capacitance | Ciss | -- 4300 -- | pF | VDS=25VVGS=0 f=1MHz |
| Output Capacitance | Coss | -- 690 -- | pF | |
| Reverse Transfer Capacitance | Crss | -- 160 -- | pF | |
| Continuous Drain-Source Diode Forward Current (Note 2) | IS | -- 50 | A | |
| Diode Forward On-Voltage | VSD | -- 1.4 | V | IS=25AVGS=0 |
| Thermal Resistance, Junction to Case | Rth(j-c) | -- 0.42 | /W |
Note 1: Repetitive Rating : Pulse width limited by maximum junction temperature
Note 2: Pulse test: PW <= 300us , duty cycle <= 2%
2410121732_OSEN-OSH50N20_C20607794.pdf
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