Dual N Channel Power MOSFET PJSEMI PJM8205JDNSG S Featuring Halogen Free and Antimony Free Materials
Key Attributes
Model Number:
PJM8205JDNSG-S
Product Custom Attributes
Configuration:
Common Drain
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
35mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
56pF
Number:
2 N-Channel
Pd - Power Dissipation:
1W
Input Capacitance(Ciss):
340pF
Gate Charge(Qg):
5.2nC
Mfr. Part #:
PJM8205JDNSG-S
Package:
SOT-23-6
Product Description
Product Overview
The PJM8205JDNSG-S is a Dual N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is designed for applications such as load switching, PWM applications, and power management. This device is RoHS and Reach compliant, and is halogen and antimony free.
Product Attributes
- Brand: PingJingSemi
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Drain Current-Continuous | ID | 4 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 15 | A | ||
| Maximum Power Dissipation | PD | 1 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Thermal Resistance,Junction-to-Ambient | RθJA | Note2 | 125 | °C/W | ||
| Electrical Characteristics (Ta=25°C unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250μA | 20 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | -- | 1 | μA | |
| Gate-Body Leakage Current | IGSS | VGS=±12V,VDS=0V | -- | ±100 | nA | |
| Gate Threshold Voltage | VGS(th) | Note3,VDS=VGS,ID=250μA | 0.4 | 0.65 | 1 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=4.5V,ID=4A | 23 | 30 | mΩ | |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=2.5V,ID=3A | 28 | 35 | mΩ | |
| Forward Transconductance | gFS | Note3,VDS=5V,ID=1A | 7 | -- | S | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=10V,VGS=0V,f=1MHz | 340 | -- | pF | |
| Output Capacitance | Coss | VDS=10V,VGS=0V,f=1MHz | 82 | -- | pF | |
| Reverse Transfer Capacitance | Crss | VDS=10V,VGS=0V,f=1MHz | 56 | -- | pF | |
| Gate Resistance | RG | VDS=0V,VGS=0V,f=1MHz | 25 | -- | Ω | |
| Total Gate Charge | Qg | VDS=10V,ID=3A, VGS=0V~4.5V | 5.2 | -- | nC | |
| Gate-Source Charge | Qgs | VDS=10V,ID=3A, VGS=0V~4.5V | 0.9 | -- | nC | |
| Gate-Drain Charge | Qgd | VDS=10V,ID=3A, VGS=0V~4.5V | 1.1 | -- | nC | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=10V, ID=3A, VGS=4V,RGEN=3Ω | 4 | -- | nS | |
| Turn-on Rise Time | tr | VDD=10V, ID=3A, VGS=4V,RGEN=3Ω | 28 | -- | nS | |
| Turn-off Delay Time | td(off) | VDD=10V, ID=3A, VGS=4V,RGEN=3Ω | 66 | -- | nS | |
| Turn-off Fall Time | tf | VDD=10V, ID=3A, VGS=4V,RGEN=3Ω | 50 | -- | nS | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3,VGS=0V,IS=4A | -- | 1.2 | V | |
| Diode Forward Current | IS | Note2 | -- | 4 | A | |
2411121111_PJSEMI-PJM8205JDNSG-S_C41413536.pdf
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