P Channel Enhancement Mode MOSFET PJSEMI PJM09P30DF Ideal for Load Switching and PWM Power Control
Key Attributes
Model Number:
PJM09P30DF
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
132pF
Number:
1 P-Channel
Input Capacitance(Ciss):
1.03nF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
52nC@10V
Mfr. Part #:
PJM09P30DF
Package:
DFN2x2-6L
Product Description
Product Overview
The PJM09P30DF is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is designed for load switching, PWM applications, and power management. This RoHS and Reach compliant, Halogen and Antimony Free component offers low on-resistance and is suitable for various power management scenarios.
Product Attributes
- Brand: Pingjingsemi
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 1
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | -ID | 9 | A | |||
| Drain Current-Pulsed | -IDM | Note1 | 50 | A | ||
| Single Pulsed Avalanche Energy | EAS | Note2 | 36 | mJ | ||
| Maximum Power Dissipation | PD | 2 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Thermal Resistance,Junction-to-Ambient | RJA | 62.5 | C/W | |||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250A | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-30V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | -VGS(th) | Note3, VDS=VGS,ID=-250A | 1.0 | -- | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=-10V,ID=-6.5A | -- | 19 | 25 | m |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=-4.5V,ID=-5A | -- | 28 | 45 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V,VGS=0V,f=1MHz | -- | 1030 | -- | pF |
| Output Capacitance | Coss | VDS=-15V,VGS=0V,f=1MHz | -- | 155 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=-15V,VGS=0V,f=1MHz | -- | 132 | -- | pF |
| Total Gate Charge | Qg | VDS=-15V,ID=-8A, VGS=-10V | -- | 52 | -- | nC |
| Gate-Source Charge | Qgs | VDS=-15V,ID=-8A, VGS=-10V | -- | 9.8 | -- | nC |
| Gate-Drain Charge | Qg | VDS=-15V,ID=-8A, VGS=-10V | -- | 8.3 | -- | nC |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=-15V, ID=-1A, VGS=-10V, RGEN=6 | -- | 13 | -- | nS |
| Turn-on Rise Time | tr | VDD=-15V, ID=-1A, VGS=-10V, RGEN=6 | -- | 15 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=-15V, ID=-1A, VGS=-10V, RGEN=6 | -- | 198 | -- | nS |
| Turn-off Fall Time | tf | VDD=-15V, ID=-1A, VGS=-10V, RGEN=6 | -- | 98 | -- | nS |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | -VSD | Note3, VGS=0V,IS=-9A | -- | -- | 1.2 | V |
| Diode Forward Current | -IS | VGS=0V | -- | -- | 9 | A |
2407301136_PJSEMI-PJM09P30DF_C36493755.pdf
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