Switch mode power supplies using OSEN OSP65NF06 60V N channel MOSFET with low level drive capability
Key Attributes
Model Number:
OSP65NF06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
65A
RDS(on):
15mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
135pF
Output Capacitance(Coss):
400pF
Input Capacitance(Ciss):
1.7nF
Pd - Power Dissipation:
155W
Gate Charge(Qg):
75nC@10V
Mfr. Part #:
OSP65NF06
Package:
TO-220
Product Description
Product Overview
The OSEN OSP65NF06 is a 60V N-channel MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive capability, and improved dv/dt performance with high ruggedness. This MOSFET is suitable for use in high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Publication Order Number: OSP65NF06
- Revision: Rev 21.2.10
- Package: TO-220
Technical Specifications
| Symbol | Parameters | Ratings | Unit | Conditions |
| VDSS | Drain-Source Voltage | 60 | V | |
| VGS | Gate-Source Voltage-Continuous | ±20 | V | |
| ID | Drain Current-Continuous | 65 | A | (Note 2) |
| IDM | Drain Current-Single Plused | 260 | A | (Note 1) |
| PD | Power Dissipation | 155 | W | (Note 2) |
| Tj Max. | Operating junction temperature | 150 | ||
| BVDSS | Drain-Source Breakdown Voltage | 60 | V | ID=250µA, VGS=0V, TJ=25°C |
| VGS(th) | Gate Threshold Voltage | 2.0 - 4.0 | V | VDS=VGS, ID=250µA |
| RDS(on) | Drain-Source On-Resistance | -- 15 -- | mΩ | VGS=10V, ID=30A |
| IGSS | Gate-Body Leakage Current | -- ±100 | nA | VGS=±20V, VDS=0 |
| IDSS | Zero Gate Voltage Drain Current | -- 1 | µA | VDS=6V, VGS=0 |
| gfs | Forward Transconductance | -- 50 -- | S | VDS=15V, ID=30A |
| Td(on) | Turn-On Delay Time | -- 15 -- | ns | VDD=30V, ID=30A, RG=4.7Ω (Note 2) |
| Tr | Rise Time | -- 60 -- | ns | |
| Td(off) | Turn-Off Delay Time | -- 40 -- | ns | |
| Tf | Fall Time | -- 16 -- | ns | |
| Qg | Total Gate Charge | -- 54 - 75 | nC | VDD=30, VGS=10V, ID=65A (Note 2) |
| Qgs | Gate-Source Charge | -- 10 -- | nC | |
| Qgd | Gate-Drain Charge | -- 20 -- | nC | |
| Ciss | Input Capacitance | -- 1700 -- | pF | VDS=25V, VGS=0, f=1MHz |
| Coss | Output Capacitance | -- 400 -- | pF | |
| Crss | Reverse Transfer Capacitance | -- 135 -- | pF | |
| IS | Continuous Drain-Source Diode Forward Current | -- 65 | A | (Note 2) |
| VSD | Diode Forward On-Voltage | -- 1.5 | V | IS=65A, VGS=0 |
| Rth(j-c) | Thermal Resistance, Junction to Case | -- 0.81 | °C/W |
2410121732_OSEN-OSP65NF06_C22462936.pdf
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