600 volt 20 amp igbt onsemi FGAF20N60SMD offering fast switching low conduction losses for industrial
Key Attributes
Model Number:
FGAF20N60SMD
Product Custom Attributes
Td(off):
91ns
Pd - Power Dissipation:
75W
Td(on):
12ns
Collector-Emitter Breakdown Voltage (Vces):
600V
Reverse Transfer Capacitance (Cres):
30pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
6V@250uA
Gate Charge(Qg):
64nC
Operating Temperature:
-55℃~+175℃
Reverse Recovery Time(trr):
26.7ns
Switching Energy(Eoff):
187uJ
Turn-On Energy (Eon):
452uJ
Input Capacitance(Cies):
925pF
Pulsed Current- Forward(Ifm):
60A
Output Capacitance(Coes):
89pF
Mfr. Part #:
FGAF20N60SMD
Package:
TO-3PF
Product Description
Product Overview
The FGAF20N60SMD is a 600 V, 20 A Field Stop IGBT utilizing novel field stop technology. It offers optimum performance for solar inverter, UPS, welder, and PFC applications, emphasizing low conduction and switching losses. Key features include a maximum junction temperature of 175C, positive temperature co-efficient for easy parallel operation, high current capability, low saturation voltage (1.7 V Typ. @ IC = 20 A), high input impedance, fast switching (EOFF = 7 uJ/A), and tightened parameter distribution. This device is RoHS compliant.
Product Attributes
- Brand: ON Semiconductor (formerly Fairchild Semiconductor)
- Certifications: RoHS Compliant
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VCES | Collector to Emitter Voltage | 600 | V | |||
| VGES | Gate to Emitter Voltage | ±20 | V | |||
| IC | Collector Current @ TC = 25°C | 40 | A | |||
| IC | Collector Current @ TC = 100°C | 20 | A | |||
| ICM(1) | Pulsed Collector Current | 60 | A | |||
| IF | Diode Forward Current @ TC = 25°C | 20 | A | |||
| IF | Diode Forward Current @ TC = 100°C | 10 | A | |||
| IFM(1) | Pulsed Diode Maximum Forward Current | 60 | A | |||
| PD | Maximum Power Dissipation @ TC = 25°C | 75 | W | |||
| PD | Maximum Power Dissipation @ TC = 100°C | 37.5 | W | |||
| TJ | Operating Junction Temperature | -55 | +175 | °C | ||
| Tstg | Storage Temperature Range | -55 | +175 | °C | ||
| TL | Maximum Lead Temp. for soldering Purposes, 1/8 from case for 5 seconds | 300 | °C | |||
| Thermal Characteristics | ||||||
| RθJC(IGBT) | Thermal Resistance, Junction to Case | 2.0 | °C/W | |||
| RθJC(Diode) | Thermal Resistance, Junction to Case | 4.0 | °C/W | |||
| RθJA | Thermal Resistance, Junction to Ambient | 40 | °C/W | |||
| Electrical Characteristics of the IGBT (TC = 25°C unless otherwise noted) | ||||||
| BVCES | Collector to Emitter Breakdown Voltage | VGE = 0V, IC = 250µA | 600 | V | ||
| ΔBVCES / ΔTJ | Temperature Coefficient of Breakdown Voltage | VGE = 0V, IC = 250µA | 0.62 | V/°C | ||
| ICES | Collector Cut-Off Current | VCE = VCES, VGE = 0V | 250 | µA | ||
| IGES | G-E Leakage Current | VGE = VGES, VCE = 0V | ±400 | nA | ||
| VGE(th) | G-E Threshold Voltage | IC = 250µA, VCE = VGE | 3.5 | 4.7 | 6.0 | V |
| VCE(sat) | Collector to Emitter Saturation Voltage | IC = 20A, VGE = 15V | 1.7 | 2.5 | V | |
| VCE(sat) | Collector to Emitter Saturation Voltage | IC = 20A, VGE = 15V, TC = 175°C | 1.9 | V | ||
| Cies | Input Capacitance | VCE = 30V, VGE = 0V, f = 1MHz | 925 | pF | ||
| Coes | Output Capacitance | 89 | pF | |||
| Cres | Reverse Transfer Capacitance | 30 | pF | |||
| td(on) | Turn-On Delay Time | VCC = 400V, IC = 20A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25°C | 12 | ns | ||
| tr | Rise Time | 22 | ns | |||
| td(off) | Turn-Off Delay Time | 91 | ns | |||
| tf | Fall Time | 21 | 27 | ns | ||
| Eon | Turn-On Switching Loss | 452 | uJ | |||
| Eoff | Turn-Off Switching Loss | 141 | 187 | uJ | ||
| Ets | Total Switching Loss | 593 | uJ | |||
| td(on) | Turn-On Delay Time | VCC = 400V, IC = 20A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 175°C | 12 | ns | ||
| tr | Rise Time | 19 | ns | |||
| td(off) | Turn-Off Delay Time | 93 | ns | |||
| tf | Fall Time | 16 | ns | |||
| Eon | Turn-On Switching Loss | 667 | uJ | |||
| Eoff | Turn-Off Switching Loss | 317 | uJ | |||
| Ets | Total Switching Loss | 984 | uJ | |||
| Qg | Total Gate Charge | VCE = 400V, IC = 20A, VGE = 15V | 64 | nC | ||
| Qge | Gate to Emitter Charge | 6.2 | nC | |||
| Qgc | Gate to Collector Charge | 32 | nC | |||
| Electrical Characteristics of the Diode (TC = 25°C unless otherwise noted) | ||||||
| VFM | Diode Forward Voltage | IF = 10A, TC = 25°C | 2.3 | V | ||
| VFM | Diode Forward Voltage | IF = 10A, TC = 175°C | 1.67 | V | ||
| Erec | Reverse Recovery Energy | IF =10A, dIF/dt = 200A/µs, TC = 175°C | 13.8 | uJ | ||
| trr | Diode Reverse Recovery Time | TC = 25°C | 26.7 | ns | ||
| trr | Diode Reverse Recovery Time | TC = 175°C | 88.2 | ns | ||
| Qrr | Diode Reverse Recovery Charge | TC = 25°C | 42 | nC | ||
| Qrr | Diode Reverse Recovery Charge | TC = 175°C | 245 | nC | ||
2410121806_onsemi-FGAF20N60SMD_C462121.pdf
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