power management P Channel Enhancement Mode MOSFET PJSEMI PJM16P12DF with low gate charge and low RDS
Key Attributes
Model Number:
PJM16P12DF
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
16A
Operating Temperature -:
-55℃~+150℃
RDS(on):
22mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
590pF
Number:
1 P-Channel
Output Capacitance(Coss):
680pF
Pd - Power Dissipation:
8W
Input Capacitance(Ciss):
2.7nF
Gate Charge(Qg):
60nC@4.5V
Mfr. Part #:
PJM16P12DF
Package:
DFN2x2A-6L
Product Description
Product Overview
The PJM16P12DF is a P-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features low gate charge and low RDS(ON), making it suitable for load switching and PWM applications. This device offers a VDS of -12V and a continuous ID of -16A, with an RDS(on) as low as 18m at VGS=-4.5V.
Product Attributes
- Brand: PJM
- Package: DFN2x2-6L
- Marking Code: 16P12
- Revision: 2.0
- Date: Sep-2021
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 12 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Drain Current-Continuous | -ID | 16 | A | |||
| Drain Current-Pulsed | -IDM | Note1 | 64 | A | ||
| Maximum Power Dissipation | PD | 8 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Thermal Resistance,Junction-to-Ambient | RJA | Note4 | 278 | C/W | ||
| Thermal Resistance,Junction-to-Case | RJC | Note2 | 15.6 | C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250A | 12 | V | ||
| Zero Gate Voltage Drain Current | -IDSS | VDS=-12V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=12V,VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | -VGS(th) | Note3,VDS=VGS,ID=-250A | 0.4 | 0.7 | 1 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=-4.5V,ID=-8A | 16 | 22 | m | |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=-2.5V,ID=-5A | 24 | 32 | m | |
| Forward Transconductance | gFS | Note3,VDS=-5V,ID=-6.7A | 20 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-6V,VGS=0V,f=1MHz | 2700 | pF | ||
| Output Capacitance | Coss | 680 | pF | |||
| Reverse Transfer Capacitance | Crss | 590 | pF | |||
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDS=-6V,VGEN=-4.5V, ID=-8A,RG=2.5 | 11 | ns | ||
| Turn-on Rise Time | tr | 35 | ns | |||
| Turn-off Delay Time | td(off) | 30 | ns | |||
| Turn-off Fall Time | tf | 10 | ns | |||
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=-6V,VGS=-4.5V,ID=-8A | 35 | nC | ||
| Gate-Source Charge | Qgs | 5 | nC | |||
| Gate-Drain Charge | Qg d | 10 | nC | |||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | -VSD | VGS=0V,IS=-16A | 1.2 | V | ||
| Diode Forward Current | -IS | 16 | A | |||
2409302232_PJSEMI-PJM16P12DF_C22470328.pdf
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