Low On Resistance Complementary N Channel and P Channel Power MOSFET PJSEMI PJM08C60PA for Switching
Key Attributes
Model Number:
PJM08C60PA
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
8A
RDS(on):
40mΩ@10V,8A
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
75pF;66pF
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
865pF;1.1nF
Output Capacitance(Coss):
85pF;77pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
25nC@10V;23.4nC@10V
Mfr. Part #:
PJM08C60PA
Package:
SOP-8
Product Description
PJM08C60PA N and P-Channel Complementary Power MOSFET
The PJM08C60PA is a complementary N-Channel and P-Channel Power MOSFET designed for high power and current handling capabilities. Featuring advanced trench technology and a low on-resistance, this device offers fast switching speeds and is available in a lead-free SOP-8 surface mount package. It is suitable for various applications requiring efficient power management.
Product Attributes
- Brand: PingJingSemi
- Origin: China
- Material: Silicon
- Certifications: Lead Free Product is Acquired
Technical Specifications
| Parameter | Symbol | N-Channel Condition | Min. | Typ. | Max. | Unit | P-Channel Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Voltage | VDS | VGS=0V,ID=250A | 60 | -- | -- | V | VGS=0V,ID=-250A | -60 | -- | -- | V |
| Gate-Source Voltage | VGS | -- | -- | -- | 20 | V | -- | -- | -- | 20 | V |
| Drain Current-Continuous | ID | VGS=10V | -- | -- | 8 | A | VGS=-10V | -- | -- | -8 | A |
| Drain Current-Pulsed | IDM | Note1 | -- | -- | 40 | A | Note1 | -- | -- | -30 | A |
| Maximum Power Dissipation | PD | Note2 | -- | -- | 2 | W | Note2 | -- | -- | 2 | W |
| Single pulse avalanche energy | EAS | Note4 | -- | -- | 30 | mJ | Note4 | -- | -- | 30 | mJ |
| Junction Temperature | TJ | -- | -- | -- | 150 | C | -- | -- | -- | 150 | C |
| Storage Temperature Range | TSTG | -- | -55 | -- | +150 | C | -- | -55 | -- | +150 | C |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 60 | -- | -- | V | VGS=0V,ID=-250A | 60 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | -- | -- | 1 | A | VDS=-60V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | Note3 | 1 | 1.5 | 2.5 | V | Note3 | 1 | 1.6 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=10V,ID=8A | -- | 22 | 40 | m | Note3, VGS=-10V,ID=-8A | -- | 52 | 70 | m |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=4.5V,ID=8A | -- | 25 | 50 | m | Note3, VGS=-4.5V,ID=-8A | -- | 61 | 90 | m |
| Forward Transconductance | gFS | Note3, VDS=5V,ID=2A | -- | 8 | -- | S | Note3, VDS=-5V,ID=-2A | -- | 8 | -- | S |
| Input Capacitance | Ciss | VDS=20V,VGS=0V,f=1MHz | -- | 865 | -- | pF | VDS=-20V,VGS=0V,f=1MHz | -- | 1100 | -- | pF |
| Output Capacitance | Coss | VDS=20V,VGS=0V,f=1MHz | -- | 85 | -- | pF | VDS=-20V,VGS=0V,f=1MHz | -- | 77 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=20V,VGS=0V,f=1MHz | -- | 75 | -- | pF | VDS=-20V,VGS=0V,f=1MHz | -- | 66 | -- | pF |
| Gate Resistance | Rg | VDS=0V,VGS=0V,f =1MHz | -- | 1.1 | -- | VDS=0V,VGS=0V,f =1MHz | -- | 3.6 | -- | ||
| Turn-on Delay Time | td(on) | VDD=30V,RL=2.5,VGS=10V,RGEN=3 | -- | 7 | -- | nS | VDD=-30V, RL=3.75,VGS=-10V, RGEN=3 | -- | 8 | -- | nS |
| Turn-on Rise Time | tr | VDD=30V,RL=2.5,VGS=10V,RGEN=3 | -- | 20 | -- | nS | VDD=-30V, RL=3.75,VGS=-10V, RGEN=3 | -- | 4 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=30V,RL=2.5,VGS=10V,RGEN=3 | -- | 16 | -- | nS | VDD=-30V, RL=3.75,VGS=-10V, RGEN=3 | -- | 32 | -- | nS |
| Turn-off Fall Time | tf | VDD=30V,RL=2.5,VGS=10V,RGEN=3 | -- | 23 | -- | nS | VDD=-30V, RL=3.75,VGS=-10V, RGEN=3 | -- | 7 | -- | nS |
| Total Gate Charge | Qg | VDS=30V,ID=6A,VGS=10V | -- | 25 | -- | nC | VDS=-30V, ID=-8A, VGS=-10V | -- | 23.4 | -- | nC |
| Gate-Source Charge | Qgs | VDS=30V,ID=6A,VGS=10V | -- | 3 | -- | nC | VDS=-30V, ID=-8A, VGS=-10V | -- | 4.1 | -- | nC |
| Gate-Drain Charge | Qg | VDS=30V,ID=6A,VGS=10V | -- | 6.4 | -- | nC | VDS=-30V, ID=-8A, VGS=-10V | -- | 4.8 | -- | nC |
| Diode Forward Voltage | VSD | Note3, IS=8A | -- | -- | 1.2 | V | Note3, IS=-8A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | -- | -- | -- | 6 | A | -- | -- | -- | 6 | A |
Package Outline
| Package | Dimensions (mm) | Ordering Information | Shipping |
| SOP-8 | See Drawing | PJM08C60PA SOP-8 | 4,000PCS/Reel&13inches |
2405221106_PJSEMI-PJM08C60PA_C22438604.pdf
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