N Channel MOSFET OSEN IRFP90N20DPBF 200V with Low Level Drive and Tested Avalanche Energy Capability
Key Attributes
Model Number:
IRFP90N20DPBF
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
90A
RDS(on):
18mΩ@10V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
440pF
Number:
1 N-channel
Output Capacitance(Coss):
1.1nF
Input Capacitance(Ciss):
5.8nF
Pd - Power Dissipation:
480W
Gate Charge(Qg):
410nC@10V
Mfr. Part #:
IRFP90N20DPBF
Package:
TO-247S
Product Description
Product Overview
The IRFP90N20DPBF is a 200V N-CHANNEL MOSFET from OSEN, designed for high efficiency and ruggedness. It features fast switching speeds, high input impedance, low-level drive, and tested avalanche energy with improved dv/dt capability. This MOSFET is ideal for applications such as high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Origin: China (implied by .net.cn domain)
- Model Number: IRFP90N20DPBF
- Package Type: TO-247S
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
| Drain-Source Voltage | VDSS | 200 | V | |
| Gate-Source Voltage-Continuous | VGS | ±20 | V | |
| Drain Current-Continuous (Note 2) | ID | 90 | A | Tc=25°C |
| Drain Current-Single Pulsed (Note 1) | IDM | 360 | A | |
| Power Dissipation (Note 2) | PD | 480 | W | Tc=25°C |
| Max.Operating junction temperature | Tj | 150 | °C | |
| Drain-Source Breakdown Voltage (Note 1) | BVDSS | 200 | V | ID=250µA, VGS=0V, TJ=25°C |
| Gate Threshold Voltage | VGS(th) | 2.0 -- 4.0 | V | VDS=VGS, ID=250µA |
| Drain-Source On-Resistance | RDS(on) | -- 18 -- | mΩ | VGS=10V, ID=50A |
| Gate-Body Leakage Current | IGSS | -- ±100 | nA | VGS=±30V, VDS=0 |
| Zero Gate Voltage Drain Current | IDSS | -- 10 | µA | VDS=200V, VGS=0 |
| Forward Transconductance | gfs | -- 30 -- | S | VDS=40V, ID=15A |
| Turn-On Delay Time | Td(on) | -- 78 -- | ns | VDS=480V, ID=90A, RG=20Ω(Note 2) |
| Rise Time | Tr | -- 320 -- | ns | |
| Turn-Off Delay Time | Td(off) | -- 1500 -- | ns | |
| Fall Time | Tf | -- 480 -- | ns | |
| Total Gate Charge | Qg | -- 410 -- | nC | VDS=480V, VGS=10V, ID=90A(Note 2) |
| Gate-Source Charge | Qgs | -- 30 -- | nC | |
| Gate-Drain Charge | Qgd | -- 245 -- | nC | |
| Input Capacitance | Ciss | -- 5800 -- | pF | VDS=25V, VGS=0, f=1MHz |
| Output Capacitance | Coss | -- 1100 -- | pF | |
| Reverse Transfer Capacitance | Crss | -- 440 -- | pF | |
| Diode Forward Current (Note 2) | IS | -- 90 | A | |
| Diode Forward On-Voltage | VSD | -- 1.4 | V | IS=90A, VGS=0 |
| Thermal Resistance, Junction to Case | Rth(j-c) | -- 0.26 | °C/W |
2411220033_OSEN-IRFP90N20DPBF_C41416573.pdf
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