250V n channel mosfet OSEN IXTK90N25L2 featuring fast switching speed and improved dv dt capability
Key Attributes
Model Number:
IXTK90N25L2
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
90A
RDS(on):
35mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
380pF
Number:
1 N-channel
Output Capacitance(Coss):
2.11nF
Input Capacitance(Ciss):
5.88nF
Pd - Power Dissipation:
360W
Gate Charge(Qg):
655nC@10V
Mfr. Part #:
IXTK90N25L2
Package:
TO-3PL
Product Description
Product Overview
The IXTK90N25L2 is a 250V N-CHANNEL MOSFET from OSEN, designed for high-efficiency applications. It features fast switching speeds, high input impedance with low-level drive, tested avalanche energy, and improved dv/dt capability for high ruggedness. This MOSFET is suitable for high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Origin: http://www.osen.net.cn
- Publication Order Number: IXTK90N25L2
- Revision: Rev 21.2.10
- Package: TO-3PL
Technical Specifications
| Parameters | Unit | Conditions | Min | Typ | Max | |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | V | 250 | ||||
| Gate-Source Voltage-Continuous | V | 30 | ||||
| Drain Current-Continuous (Note 2) | A | 90 | ||||
| Drain Current-Single Pulsed (Note 1) | A | 360 | ||||
| Power Dissipation (Note 2) | W | 360 | ||||
| Max.Operating junction temperature | 150 | |||||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage Current (Note 1) | V | ID=250A VGS=0VTJ=25C | 250 | -- | -- | |
| Gate Threshold Voltage | V | VDS=VGSID=250A | 2.0 | -- | 4.0 | |
| Drain-Source On-Resistance | m | VGS=10VID=1.0A | -- | 35 | -- | |
| Gate-Body Leakage Current | nA | VGS=20VVDS=0 | -- | -- | 100 | |
| Zero Gate Voltage Drain Current | A | VDS=80VVGS=0 | -- | -- | 1 | |
| Forward Transconductance | S | VDS=20VID=10A | -- | 55 | -- | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | ns | VDS=125VID=45A RG=2.0Note 2 | -- | 50 | -- | |
| Rise Time | ns | -- | 180 | -- | ||
| Turn-Off Delay Time | ns | -- | 45 | -- | ||
| Fall Time | ns | -- | 160 | -- | ||
| Total Gate Charge | nC | VDS=125V VGS=10V ID=45ANote 2 | -- | 655 | -- | |
| Gate-Source Charge | nC | -- | 125 | -- | ||
| Gate-Drain Charge | nC | -- | 385 | -- | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | pF | VDS=25VVGS=0 f=1MHz | -- | 5880 | -- | |
| Output Capacitance | pF | -- | 2110 | -- | ||
| Reverse Transfer Capacitance | pF | -- | 380 | -- | ||
| Diode Forward Current (Note 2) | A | -- | -- | 90 | ||
| Diode Forward On-Voltage | V | IS=1AVGS=0 | -- | -- | 1.2 | |
| Thermal Resistance, Junction to Case | /W | -- | -- | 0.34 | ||
| Reverse Recovery Time | ns | VGS = 0V, IS = 90A, diF/dt =100A /s | -- | 360 | -- | |
2506061725_OSEN-IXTK90N25L2_C42381453.pdf
Related Products
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
