Durable OSEN OSP80P06T P channel MOSFET featuring fast switching and low level drive for electronics
Key Attributes
Model Number:
OSP80P06T
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
80A
RDS(on):
20mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
450pF
Pd - Power Dissipation:
160W
Output Capacitance(Coss):
550pF
Input Capacitance(Ciss):
7.88nF
Gate Charge(Qg):
129nC@10V
Mfr. Part #:
OSP80P06T
Package:
TO-220
Product Description
Product Overview
The OSP80P06T is a -60V P-CHANNEL MOSFET from OSEN, designed for high efficiency and ruggedness. It features fast switching speeds, high input impedance, low level drive, and avalanche energy testing. This MOSFET is ideal for applications such as high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Publication Order Number: OSP80P06T
- Revision: 21.2.10
Technical Specifications
| Parameters | Symbol | Ratings | Unit | Conditions |
| Drain-Source Voltage | VDSS | -60 | V | |
| Gate-Source Voltage-Continuous | VGS | 20 | V | |
| Drain Current-Continuous | ID | -80 | A | Note 2 |
| Drain Current-Single Pulsed | IDM | -160 | A | Note 1 |
| Power Dissipation | PD | 160 | W | Note 2 |
| Max.Operating junction temperature | Tj Max. | 150 | ||
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | ID=-250AVGS=0VTJ=25C |
| Gate Threshold Voltage | VGS(th) | -1.1 | V | VDS=VGS ID=-250A |
| Drain-Source On-Resistance | RDS(on) | 17 | m | VGS=-10VID=-20A |
| Gate-Body Leakage Current | IGSS | 100 | nA | VGS=20VVDS=0 |
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VDS=-60VVGS=0 |
| Forward Transconductance | gfs | 16 | S | VDS=-30VID=-25A |
| Turn-On Delay Time | Tdon | 15 | ns | VDS=-30V ID=-25ARG=5Note 2 |
| Rise Time | Tr | 25 | ns | |
| Turn-Off Delay Time | Tdoff | 95 | ns | |
| Fall Time | Tf | 30 | ns | |
| Total Gate Charge | Qg | 129 | nC | VDS=-48V VGS=-10VID=-25ANote 2 |
| Gate-Source Charge | Qgs | 25 | nC | |
| Gate-Drain Charge | Qgd | 22 | nC | |
| Input Capacitance | Ciss | 7880 | pF | VDS=-25VVGS=0f=1MHz |
| Output Capacitance | Coss | 550 | pF | |
| Reverse Transfer Capacitance | Crss | 450 | pF | |
| Diode Forward Current | IS | -80 | A | Note 2 |
| Diode Forward On-Voltage | VSD | -1.6 | V | IS=-80AVGS=0 |
| Thermal Resistance, Junction to Case | Rth(j-c) | 0.78 | /W |
Note 1: Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2: Pulse test: PW <= 300us, duty cycle <= 2%.
2410121732_OSEN-OSP80P06T_C20607813.pdf
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