power management MOSFET PJSEMI PJM10P30PA with advanced trench technology and 3.7 watt maximum power dissipation
Key Attributes
Model Number:
PJM10P30PA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10A
RDS(on):
23mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
278pF@15V
Number:
1 P-Channel
Pd - Power Dissipation:
3.7W
Input Capacitance(Ciss):
1.55nF@15V
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
PJM10P30PA
Package:
SOP-8
Product Description
Product Overview
The PJM10P30PA is a P-Channel Enhancement Mode Power MOSFET designed for efficient power management applications. It features advanced trench technology, 100% avalanche testing, and compliance with RoHS and Reach standards, making it a reliable choice for load switching, PWM applications, and power management systems. This MOSFET offers low on-resistance and high continuous drain current capabilities.
Product Attributes
- Brand: PingJingSemi
- Product Code: PJM10P30PA
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free, Moisture Sensitivity Level 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | -ID | 10 | A | |||
| Drain Current-Pulsed | -IDM | Note1 | 40 | A | ||
| Maximum Power Dissipation | PD | 3.7 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Thermal Resistance,Junction-to-Ambient | RθJA | Note2 | 33.8 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250μA | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-30V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | -IGSS | VGS=±20V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | -VGS(th) | Note3,VDS=VGS,ID=-250μA | 1 | 1.5 | 2.4 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=-10V,ID=-10A | -- | 16 | 23 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=-4.5V,ID=-5A | -- | 25 | 34 | mΩ |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V,VGS=0V,f=1MHz | -- | 1550 | -- | pF |
| Output Capacitance | Coss | VDS=-15V,VGS=0V,f=1MHz | -- | 327 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=-15V,VGS=0V,f=1MHz | -- | 278 | -- | pF |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=-15V,ID=-6A,VGS=-10V,RG=2.5Ω | -- | 14 | -- | nS |
| Turn-on Rise Time | tr | VDD=-15V,ID=-6A,VGS=-10V,RG=2.5Ω | -- | 20 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=-15V,ID=-6A,VGS=-10V,RG=2.5Ω | -- | 95 | -- | nS |
| Turn-off Fall Time | tf | VDD=-15V,ID=-6A,VGS=-10V,RG=2.5Ω | -- | 65 | -- | nS |
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDD=-15V, ID=-9.1A,VGS=-10V | -- | 30 | -- | nC |
| Gate-Source Charge | Qgs | VDD=-15V, ID=-9.1A,VGS=-10V | -- | 5.3 | -- | nC |
| Gate-Drain Charge | Qg | VDD=-15V, ID=-9.1A,VGS=-10V | -- | 7.6 | -- | nC |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | -VSD | Note3,VGS=0V,IS=-10A | -- | -- | 1.2 | V |
| Diode Forward Current | -IS | Note2 | -- | -- | 10 | A |
2409302136_PJSEMI-PJM10P30PA_C22438608.pdf
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