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quality Motor control power module onsemi NFAM2012L5BT with three phase bridge and independent gate drivers factory
quality Motor control power module onsemi NFAM2012L5BT with three phase bridge and independent gate drivers factory

Motor control power module onsemi NFAM2012L5BT with three phase bridge and independent gate drivers

Key Attributes
Model Number: NFAM2012L5BT
Product Custom Attributes
Voltage - Isolation:
2500Vrms
Mfr. Part #:
NFAM2012L5BT
Package:
DIP-39
Product Description

Product Description

The NFAM2012L5BT is a fully-integrated Intelligent Power Module (IPM) designed for driving permanent magnet synchronous (PMSM), brushless DC (BLDC), and AC asynchronous motors. It features an independent High-side gate driver, LVIC, six IGBTs, and a temperature sensor. The IGBTs are configured in a three-phase bridge with separate emitter connections for lower legs, offering flexibility in control algorithms. Key advantages include under-voltage lockout protection (UVP) and integrated bootstrap diodes for high-side gate drive. This module is suitable for industrial drives, pumps, fans, and automation applications.

Product Attributes

  • Brand: Semiconductor Components Industries, LLC (onsemi)
  • Certifications: UL Certification (Applied)
  • Material: Pb-Free Device

Technical Specifications

Rating SymbolConditionsValueUnit
CollectorEmitter VoltageVces1200V
Maximum Repetitive Revers VoltageVRRM1200V
Each IGBT Collector CurrentIc20A
Each IGBT Collector Current (Peak)Icp (Under 1 ms Pulse Width)40A
Control Supply VoltageVDD (VDD(UH,VH,WH), VDD(L) VSS)0.3 to 20V
Gate Driver Supply VoltagesVDD (VDD(UH,VH,WH), VDD(L) VSS)13.5 to 16.5V
Gate Driver Supply VoltagesVBS (VB(U) VS(U), etc.)13.0 to 18.5V
Allowable r.m.s. CurrentIo (VPN = 600 V, VDD = VBS = 15 V, P.F. = 0.8, Tc 125C, Tj 150C, fPWM = 5 kHz)18.1A rms
Allowable r.m.s. CurrentIo (VPN = 600 V, VDD = VBS = 15 V, P.F. = 0.8, Tc 125C, Tj 150C, fPWM = 15 kHz)9.4A rms
Junction to Case Thermal ResistanceRth(jc)Q (Inverter IGBT Part)1.0C/W
Junction to Case Thermal ResistanceRth(jc)F (Inverter FRD Part)1.2C/W
CollectorEmitter Leakage CurrentIces (Vce = Vces, Tj = 25C)1mA
CollectorEmitter Saturation VoltageVCE(sat) (Ic = 20 A, Tj = 25C)1.85 to 2.5V
High Side Switching Timeston (Inductive Load)0.80 to 2.00s
Low Side Switching Timeston (Inductive Load)0.90 to 2.10s

2410010231_onsemi-NFAM2012L5BT_C897544.pdf

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