High Density P Channel Power MOSFET PAKER BSS84 from Parker Microelectronics with Low On Resistance
Key Attributes
Model Number:
BSS84
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
130mA
RDS(on):
3.6Ω@10V;4Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
1.4V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.8pF
Number:
1 P-Channel
Input Capacitance(Ciss):
43pF
Pd - Power Dissipation:
225mW
Output Capacitance(Coss):
2.9pF
Gate Charge(Qg):
1.77nC@4.5V
Mfr. Part #:
BSS84
Package:
SOT-23
Product Description
Product Overview
The BSS84 is a P-Channel Enhancement Mode Power MOSFET designed for high-density applications. It features an advanced trench process technology for ultra-low on-resistance and is housed in a small outline SOT-23 plastic package. This device is halogen-free and RoHS compliant, making it suitable for various electronic applications.
Product Attributes
- Brand: Parker Microelectronics ()
- Origin: Shenzhen, China
- Package Type: SOT-23 Small Outline Plastic Package
- Certifications: UL: 94V-0, Halogen free, RoHS compliant
- Packing: Tape/Reel, 7" reel, 3000 pcs per reel (EIA-481-1)
- Marking: B84
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
| Maximum Ratings & Thermal Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0VID=-250A | -50 | -- | -- | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS=-50VVGS=0V | -- | -- | -1 | A |
| Gate-Body Leakage Current (IGSS) | VGS=20VVDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage (VGS(th)) | VDS=VGSID=-250A | -1.0 | -1.4 | -2.0 | V |
| Diode Continuous Forward Current (IS) | TC=25C | -- | -0.13 | -- | A |
| Pulse Drain Current (IDM) | TC=25C | -- | -0.52 | -- | A |
| Tested Continuous Drain Current (ID) | TC=25C | -- | -0.13 | -- | A |
| Thermal Resistance Junction-to-Ambient (RJA) | Mounted on Large Heat Sink | -- | 556 | -- | C/W |
| Maximum Power Dissipation (PD) | TC=25C | -- | 0.225 | -- | W |
| Static Electrical Characteristics @ TJ = 25C | |||||
| Drain-Source On-State Resistance (RDS(on)) | VGS=-10V ID=-0.13A | -- | 3.6 | 5.0 | |
| Drain-Source On-State Resistance (RDS(on)) | VGS=-4.5V ID=-0.1A | -- | 4.0 | 6.0 | |
| Dynamic Electrical Characteristics @ TJ = 25C | |||||
| Input Capacitance (CISS) | VDS=-30VVGS=0V f=1MHz | -- | 43 | -- | pF |
| Output Capacitance (COSS) | VDS=-30VVGS=0V f=1MHz | -- | 2.9 | -- | pF |
| Reverse Transfer Capacitance (CRSS) | VDS=-30VVGS=0V f=1MHz | -- | 1.8 | -- | pF |
| Total Gate Charge (Qg) | VDD=-30VID=-0.15A VGS=-4.5VRG=2.5 | -- | 1.77 | -- | nC |
| Gate Source Charge (Qgs) | VDD=-30VID=-0.15A VGS=-4.5VRG=2.5 | -- | 0.57 | -- | nC |
| Gate Drain Charge (Qgd) | VDD=-30VID=-0.15A VGS=-4.5VRG=2.5 | -- | 0.18 | -- | nC |
| Turn-on Delay Time (td(on)) | VDD=-30VID=-0.15A VGS=-4.5VRG=2.5 | -- | 8.6 | -- | nS |
| Turn-on Rise Time (tr) | VDD=-30VID=-0.15A VGS=-4.5VRG=2.5 | -- | 20 | -- | nS |
| Turn-Off Delay Time (td(off)) | VDD=-30VID=-0.15A VGS=-4.5VRG=2.5 | -- | 15 | -- | nS |
| Turn-Off Fall Time (tf) | VDD=-30VID=-0.15A VGS=-4.5VRG=2.5 | -- | 77 | -- | nS |
| Forward on voltage (VSD) | TJ=25IS=-0.13A | -- | -- | -1.2 | V |
2508041620_PAKER-BSS84_C49652778.pdf
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