power switching device Qorvo UJ4C075023K3S 750V 23mW SiC FET for induction heating and EV charging
Key Attributes
Model Number:
UJ4C075023K3S
Product Custom Attributes
Drain To Source Voltage:
750V
Current - Continuous Drain(Id):
66A
Type:
N-Channel
Pd - Power Dissipation:
306W
Mfr. Part #:
UJ4C075023K3S
Package:
TO-247-3
Product Description
UnitedSiC UJ4C075023K3S 750V, 23mW SiC FET
Product Overview
The UnitedSiC UJ4C075023K3S is a 750V, 23mW G4 SiC FET designed for high-performance power applications. Utilizing a unique 'cascode' circuit configuration, it combines a normally-on SiC JFET with a Si MOSFET to achieve a normally-off device with standard gate-drive characteristics. This allows for a direct 'drop-in replacement' for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. The device excels in applications requiring standard gate drive and switching of inductive loads, offering ultra-low gate charge and exceptional reverse recovery characteristics. Key applications include EV charging, switch mode power supplies, PV inverters, power factor correction modules, motor drives, and induction heating.Product Attributes
- Brand: UnitedSiC
- Material: Silicon Carbide (SiC) FET
- Package: TO-247-3L
Technical Specifications
| Parameter | Test Conditions | Value | Units |
|---|---|---|---|
| Part Number | UJ4C075023K3S | ||
| Description | 750V-23mW SiC FET | ||
| Drain-source voltage (VDS) | 750 | V | |
| On-resistance (RDS(on)) | VGS=12V, ID=40A, TJ=25C | 23 | mW (typ) |
| On-resistance (RDS(on)) | VGS=12V, ID=40A, TJ=175C | 29 | mW (typ) |
| On-resistance (RDS(on)) | VGS=12V, ID=40A, TJ=125C | 39 | mW (typ) |
| Low gate charge (QG) | 37.8 | nC (typ) | |
| Excellent reverse recovery (Qrr) | VR=400V, IS=40A, VGS=0V, RG_EXT=5W, di/dt=1500A/ms, TJ=25C | 84 | nC (typ) |
| Low body diode VFSD | VGS=0V, IS=20A, TJ=25C | 1.23 | V (typ) |
| Threshold voltage (VG(th)) | VDS=5V, ID=10mA | 4.8 | V (typ) |
| Operating temperature (TJ,max) | 175 | C (max) | |
| ESD protected | HBM class 2 and CDM class C3 | ||
| Maximum Ratings: Drain-source voltage (VDS) | 750 | V | |
| Maximum Ratings: Gate-source voltage (VGS) | DC | ±20 | V |
| Maximum Ratings: Gate-source voltage (VGS) | AC (f >1Hz) | ±25 | V |
| Maximum Ratings: Continuous drain current (ID) | TC = 25C | 66 | A |
| Maximum Ratings: Pulsed drain current (IDM) | TC = 25C | 196 | A |
| Maximum Ratings: Single pulsed avalanche energy (EAS) | L=15mH, IAS =3A | 67 | mJ |
| Maximum Ratings: dv/dt ruggedness | VDS [ 500V TC = 100C | 150 | V/ns |
| Maximum Ratings: Power dissipation (Ptot) | TC = 25C | 306 | W |
| Maximum Ratings: Maximum junction temperature (TJ,max) | 175 | C | |
| Maximum Ratings: Operating and storage temperature (TJ, TSTG) | -55 to 175 | C | |
| Maximum Ratings: Maximum lead temperature for soldering | 1/8 from case for 5 seconds | 250 | C |
| Thermal Characteristics: Thermal resistance, junction-to-case (RqJC) | 0.38 - 0.49 | C/W |
2411261456_Qorvo-UJ4C075023K3S_C7089673.pdf
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