Three phase bridge configuration onsemi NFAP1060L3TT power module for advanced motor drive control systems
Product Overview
The NFAP1060L3TT is an intelligent power module (IPM) featuring a fully integrated inverter power stage. It comprises a high-voltage driver, six IGBTs, and a thermistor, designed for driving permanent magnet synchronous (PMSM), brushless-DC (BLDC), and AC asynchronous motors. The module's 3-phase bridge configuration with separate emitter connections for lower legs offers flexibility in control algorithm selection. It includes comprehensive protection functions such as cross-conduction protection, external shutdown, and under-voltage lockout. An internal comparator and reference allow for adjustable over-current protection levels.
Product Attributes
- Brand: onsemi (Semiconductor Components Industries, LLC)
- Certifications: UL1557 Certification (File number: E339285)
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| POWER OUTPUT SECTION | ||||||
| CollectorEmitter Leakage Current | Ices | Vce = 600 V | - | - | 1 | mA |
| Bootstrap Diode Reverse Current | IR(DB) | VR(DB) = 600 V | - | - | 1 | mA |
| CollectorEmitter Saturation Voltage | VCE(sat) | VDD = VBS = 15 V, IN = 5 V, Ic = 10 A, Tj = 25C | - | 2.1 | 2.7 | V |
| CollectorEmitter Saturation Voltage | VCE(sat) | VDD = VBS = 15 V, IN = 5 V, Ic = 5 A, Tj = 100C | - | 1.8 | - | V |
| Forward Voltage (Diode) | VF | IN = 0 V, Ic = 10 A, Tj = 25C | - | 2.2 | 2.8 | V |
| Forward Voltage (Diode) | VF | IN = 0 V, Ic = 5 A, Tj = 100C | - | 1.7 | - | V |
| Junction to Case Thermal Resistance (IGBT) | Rth(jc)Q | Inverter IGBT Part (per 1/6 Module) | - | - | 6.3 | C/W |
| Junction to Case Thermal Resistance (Diode) | Rth(jc)F | Inverter FRD Part (per 1/6 Module) | - | - | 11.6 | C/W |
| DRIVER SECTION | ||||||
| Quiescent VBS Supply Current | IQBS | VBS = 15 V, HIN = 0 V, per driver | - | 0.07 | 0.4 | mA |
| Quiescent VDD Supply Current | IQDDL | VDD = 15 V, HIN = 0 V, VDDVSS | - | 0.85 | 3.0 | mA |
| ON Threshold voltage | VIN(ON) | HIN(U), HIN(V), HIN(W), LIN(U), LIN(V), LIN(W)VSS | - | - | 2.5 | V |
| OFF Threshold voltage | VIN(OFF) | - | 0.8 | - | - | V |
| Logic 1 Input Current | IIN+ | VIN = +3.3 V | - | 660 | - | A |
| Logic 0 Input Current | IIN | VIN = 0 V | - | - | 2 | A |
| FLTEN Terminal Sink Current | IoSD | FAULT: ON / VFLTEN = 0.1 V | - | -2 | - | mA |
| FaultOutput Pulse Width | tFOD | - | 20 | - | - | s |
| Enable Threshold | VEN+ | FLTENVSS | - | - | 2.5 | V |
| Enable Threshold | VEN | FLTENVSS | 0.8 | - | - | V |
| Short Circuit Trip Level | VSC(ref) | ITRIPVSS | 0.44 | 0.49 | 0.54 | V |
| HighSide Control Bias Voltage UnderVoltage Protection Reset Level | UVBSR | - | 10.3 | 11.1 | 11.9 | V |
| HighSide Control Bias Voltage UnderVoltage Protection Detection Level | UVBSD | - | 10.1 | 10.9 | 11.7 | V |
| Supply Voltage UnderVoltage Protection Reset Level | UVDDR | - | 10.3 | 11.1 | 11.7 | V |
| Supply Voltage UnderVoltage Protection Detection Level | UVDDD | - | 10.1 | 10.9 | 11.5 | V |
| SWITCHING CHARACTERISTICS | ||||||
| Turnon Switching Time | tON | IC = 10 A, Tj = 25C | - | 0.5 | 1.0 | s |
| Turnoff Switching Time | tOFF | IC = 10 A, Tj = 25C | - | 0.5 | 1.0 | s |
| Turnon Switching Loss | EON | IC = 5 A, Tj = 25C | - | 114 | - | J |
| Turnoff Switching Loss | EOFF | IC = 5 A, Tj = 25C | - | 65 | - | J |
| Total Switching Loss | ETOT | IC = 5 A, Tj = 25C | - | 179 | - | J |
| Turnon Switching Loss | EON | IC = 5 A, Tj = 100C | - | 136 | - | J |
| Turnoff Switching Loss | EOFF | IC = 5 A, Tj = 100C | - | 75 | - | J |
| Total Switching Loss | ETOT | IC = 5 A, Tj = 100C | - | 211 | - | J |
| Diode Reverse Recovery Energy | EREC | IC = 5 A, Tj = 100C | - | 27 | - | J |
| Diode Reverse Recovery Time | tRR | - | - | 174 | - | ns |
| Short Circuit Safe Operating Area | SCSOA | VCE = 400 V, Tj = 100C | 5 | - | - | s |
2004241034_onsemi-NFAP1060L3TT_C513038.pdf
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