SOT23 Package NChannel Power MOSFET PAKER AO3402 Offering Low Gate Threshold Voltage and Performance

Key Attributes
Model Number: AO3402
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4A
RDS(on):
33mΩ@10V,4A
Gate Threshold Voltage (Vgs(th)):
900mV
Reverse Transfer Capacitance (Crss@Vds):
27pF
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
285pF
Gate Charge(Qg):
2.6nC
Mfr. Part #:
AO3402
Package:
SOT-23
Product Description

Product Overview

The AO3402 is a high-performance N-Channel Enhancement Mode Power MOSFET designed for various applications. It features a small outline SOT-23 plastic package, advanced trench process technology, and a high-density cell design for ultra-low on-resistance. This MOSFET is halogen-free and RoHS compliant, making it suitable for environmentally conscious designs.

Product Attributes

  • Brand: Paker Microelectronics (Shenzhen) Co., Ltd.
  • Origin: China
  • Package: SOT-23
  • Certifications: UL: 94V-0, Halogen free and RoHS compliant

Technical Specifications

SymbolParameterConditionMinTypMaxUnit
Static Electrical Characteristics @ TJ = 25C (unless otherwise stated)
BV(BR)DSSDrain-Source Breakdown VoltageVGS=0VID=250A30----V
VGS(th)Gate Threshold VoltageVDS=VGSID=250A0.65--1.5V
RDS(on)Drain-Source On-State ResistanceVGS=10V ID=4A--3338m
RDS(on)Drain-Source On-State ResistanceVGS=4.5VID=3A--47--m
IDSSZero Gate Voltage Drain CurrentVDS=30VVGS=0V----1A
IGSSGate-Body Leakage CurrentVGS=12VVDS=0V--100--nA
Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise stated)
CISSInput CapacitanceVDS=15VVGS=0V f=1MHz--285--pF
COSSOutput CapacitanceVDS=15VVGS=0V f=1MHz--33--pF
CRSSReverse Transfer CapacitanceVDS=15VVGS=0V f=1MHz--27--pF
td(on)Turn-on Delay TimeVDD=15VID=2A VGS=4.5V RG=3--2.6--nC
trTurn-on Rise TimeVDD=15VID=2A VGS=4.5V RG=3--------
td(off)Turn-Off Delay TimeVDD=15VID=2A VGS=4.5V RG=3--0.6--nC
tfTurn-Off Fall TimeVDD=15VID=2A VGS=4.5V RG=3--------
QgTotal Gate ChargeVDS=15VID=4A VGS=4.5V--15--nS
QgsGate Source ChargeVDS=15VID=4A VGS=4.5V--42--nS
QgdGate Drain ChargeVDS=15VID=4A VGS=4.5V--16--nS
Source- Drain Diode Characteristics
VSDForward on voltageTj=25Is=4A--0.9--V
Maximum Ratings & Thermal Characteristics
PDMaximum Power DissipationTc=25C----1.2W
RJAThermal Resistance Junction-AmbientMounted on Large Heat Sink--104--C/W
IDMPulse Drain CurrentTc=25C----19A
IDContinuous Drain CurrentTc=25C----4A
TJMaximum Junction Temperature------150C
TSTGStorage Temperature Range---50--155C
ISDiode Continuous Forward CurrentTc=25C----4A
Common Ratings (TC=25C Unless Otherwise Noted)
VDSDrain-Source Breakdown Voltage--30----V
VGSGate-Source Voltage------12V

2509180925_PAKER-AO3402_C5278898.pdf

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