Epitaxial Silicon PNP Transistor PANJIT MMBT2907AW R1 00001 with Green Molded Compound and Lead Free

Key Attributes
Model Number: MMBT2907AW_R1_00001
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
10nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
200MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT2907AW_R1_00001
Package:
SOT-323
Product Description

MMBT2907AW PNP General Purpose Switching Transistor

The MMBT2907AW is a PNP epitaxial silicon, planar design general purpose switching transistor designed for various electronic applications. It offers lead-free compliance with EU RoHS2.0 directives and utilizes a green molding compound as per IEC61249 Std. (Halogen Free).

Product Attributes

  • Brand: Panjit International Inc.
  • Material: Epitaxial Silicon, Planar Design
  • Color: Green (Molding Compound)
  • Certifications: EU RoHS2.0 (2011/65/EU & 2015/865/EU), IEC61249 Std. (Halogen Free)

Technical Specifications

ParameterSymbolMinMaxUnitConditions
Collector-Emitter VoltageVCEO-60V
Collector CurrentIC-600mA
Collector-Emitter VoltageVCE-60V
Collector CurrentIC-600mA
Power DissipationPD225mW(Note 1)
Storage TemperatureTSTG-55150C
Junction TemperatureTJ-55150C
Thermal Resistance, Junction to AmbientRJA655C/W(Note 1)
Collector-Emitter Breakdown VoltageV(BR)CEO-60VIC = -10mA, IB = 0
Collector-Base Breakdown VoltageV(BR)CBO-60VIE = 0, IC = -10A
Emitter-Base Breakdown VoltageV(BR)EBO-5.0VIC = 0, IE = -10A
Collector Cut-off CurrentICBO-50nAVCE = -30V, VEB = -5.0V
Collector Cut-off CurrentICEX-50nAVCE = -30V, VEB = -5.0V
Base Cut-off CurrentIBO-10nAVCE = -50V, IE = 0
DC Current GainhFE10IC = -10mA, VCE = -10V
DC Current GainhFE10IC = -100mA, VCE = -10V
DC Current GainhFE10IC = -500mA, VCE = -10V
DC Current GainhFE5IC = -10mA, VCE = -10V
DC Current GainhFE5IC = -100mA, VCE = -10V
DC Current GainhFE5IC = -500mA, VCE = -10V
DC Current GainhFE3IC = -10mA, VCE = -10V
DC Current GainhFE3IC = -100mA, VCE = -10V
DC Current GainhFE3IC = -500mA, VCE = -10V
Collector-Emitter Saturation VoltageVCE(sat)-0.3VIC = -150mA, IB = -15mA
Collector-Emitter Saturation VoltageVCE(sat)-0.6VIC = -500mA, IB = -50mA
Base-Emitter Saturation VoltageVBE(sat)-1.2VIC = -150mA, IB = -15mA
Base-Emitter Saturation VoltageVBE(sat)-1.5VIC = -500mA, IB = -50mA
Turn-On Timeton50nsVCC = -30V, IC = -150mA, IB1 = -15mA, IB2 = 15mA
Turn-Off Timetoff100nsVCC = -30V, IC = -150mA, IB1 = -15mA, IB2 = 15mA
Output CapacitanceCobo8.0pFVCB = -10V, f = 1.0MHz
Input CapacitanceCibo30pFVBE = -2.0V, f = 1.0MHz
Collector-Base CapacitanceCcbo7.0pFVCB = -10V, f = 1.0MHz
Current-Gain-Bandwidth ProductfT200MHzIC = -50mA, VCE = -10V
Noise FigureNF10dBIC = -0.1mA, VCE = -5V, RG = 430, f = 1.0kHz
Noise FigureNF10dBIC = -0.1mA, VCE = -5V, RG = 560, f = 1.0kHz
Noise FigureNF10dBIC = -0.5mA, VCE = -5V, RG = 2.7k, f = 1.0kHz
Noise FigureNF10dBIC = -1.0mA, VCE = -5V, RG = 1.6k, f = 1.0kHz
On VoltageVBE(on)-0.7VIC = -1.0mA, VCE = -10V
On VoltageVBE(on)-0.8VIC = -10mA, VCE = -10V
On VoltageVBE(on)-1.0VIC = -100mA, VCE = -10V
Temperature CoefficientVBE/T-2.0mV/CIC = -1.0mA, VCE = -10V
Temperature CoefficientVBE/T-2.0mV/CIC = -10mA, VCE = -10V
Temperature CoefficientVBE/T-2.0mV/CIC = -100mA, VCE = -10V

2410122017_PANJIT-MMBT2907AW-R1-00001_C263319.pdf

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