Enhancement Mode N Channel Power MOSFET ORIENTAL SEMI SFS15R10GNF with Low RDS ON and Fast Switching
Key Attributes
Model Number:
SFS15R10GNF
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
80A
RDS(on):
10mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.5V
Reverse Transfer Capacitance (Crss@Vds):
175pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
160W
Input Capacitance(Ciss):
5.132nF
Gate Charge(Qg):
70nC@10V
Mfr. Part #:
SFS15R10GNF
Package:
PDFN5x6-8
Product Description
Product Overview
The SFS15R10GNF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, designed with unique device technology to deliver low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This series, featuring a high Vth, is specifically engineered for power supply systems requiring a driving voltage exceeding 10V. It is ideal for applications such as switched-mode power supplies, motor drivers, battery protection, DC-DC converters, inverters, and UPS systems, offering exceptional reliability and uniformity.
Product Attributes
- Brand: Oriental Semiconductor
- Product Line: FSMOS MOSFET
- Series: High Vth
- Material: N-Channel Power MOSFET
- Certifications: Pb Free, RoHS, Halogen Free
- Package Marking: SFS15R10GNF
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Key Performance Parameters | ||||
| Drain-source voltage | VDS | 150 | V | |
| Pulsed drain current | ID, pulse | 240 | A | |
| Drain-source on-state resistance | RDS(ON), max | 10 | m | VGS=10V |
| Total gate charge | Qg | 70 | nC | |
| Absolute Maximum Ratings | ||||
| Drain-source voltage | VDS | 150 | V | Tj=25C unless otherwise noted |
| Gate-source voltage | VGS | 20 | V | Tj=25C unless otherwise noted |
| Continuous drain current | ID | 80 | A | TC=25 C |
| Pulsed drain current | ID, pulse | 240 | A | TC=25 C |
| Continuous diode forward current | IS | 80 | A | TC=25 C |
| Diode pulsed current | IS, pulse | 240 | A | TC=25 C |
| Power dissipation | PD | 160 | W | TC=25 C |
| Single pulsed avalanche energy | EAS | 80 | mJ | |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | C | |
| Thermal Characteristics | ||||
| Thermal resistance, junction-case | RJC | 0.78 | C/W | |
| Thermal resistance, junction-ambient | RJA | 62 | C/W | |
| Electrical Characteristics | ||||
| Drain-source breakdown voltage | BVDSS | 150 | V | VGS=0 V, ID=250 A |
| Gate threshold voltage | VGS(th) | 3.0 - 4.5 | V | VDS=VGS, ID=250 A |
| Drain-source on-state resistance | RDS(ON) | 9 - 10 | m | VGS=10 V, ID=20 A |
| Gate-source leakage current | IGSS | 100 | nA | VGS=20 V |
| Drain-source leakage current | IDSS | 1 | A | VDS=135 V, VGS=0 V |
| Gate resistance | RG | 2.4 | =1 MHz, Open drain | |
| Dynamic Characteristics | ||||
| Input capacitance | Ciss | 5132 | pF | VGS=0 V, VDS=25 V, =100 kHz |
| Output capacitance | Coss | 1674 | pF | VGS=0 V, VDS=25 V, =100 kHz |
| Reverse transfer capacitance | Crss | 175 | pF | VGS=0 V, VDS=25 V, =100 kHz |
| Turn-on delay time | td(on) | 22 | ns | VGS=10 V, VDS=75 V, RG=2 , ID=44 A |
| Rise time | tr | 22 | ns | VGS=10 V, VDS=75 V, RG=2 , ID=44 A |
| Turn-off delay time | td(off) | 38 | ns | VGS=10 V, VDS=75 V, RG=2 , ID=44 A |
| Fall time | tf | 8.8 | ns | VGS=10 V, VDS=75 V, RG=2 , ID=44 A |
| Gate Charge Characteristics | ||||
| Total gate charge | Qg | 70 | nC | VGS=10 V, VDS=75 V, ID=44 A |
| Gate-source charge | Qgs | 27 | nC | VGS=10 V, VDS=75 V, ID=44 A |
| Gate-drain charge | Qgd | 18 | nC | VGS=10 V, VDS=75 V, ID=44 A |
| Gate plateau voltage | Vplateau | 6.2 | V | VGS=10 V, VDS=75 V, ID=44 A |
| Body Diode Characteristics | ||||
| Diode forward voltage | VSD | 1.3 | V | IS=20 A, VGS=0 V |
| Reverse recovery time | trr | 76 | ns | VR=80 V, IS=40 A, di/dt=100 A/s |
| Reverse recovery charge | Qrr | 285 | nC | VR=80 V, IS=40 A, di/dt=100 A/s |
| Peak reverse recovery current | Irrm | 5.9 | A | VR=80 V, IS=40 A, di/dt=100 A/s |
| Package Information | ||||
| Package Type | PDFN5*6-P | |||
| Units/Reel | 5000 | |||
| Reels/Inner Box | 2 | |||
| Units/Inner Box | 10000 | |||
| Inner Boxes/Carton Box | 5 | |||
| Units/Carton Box | 50000 | |||
2410121806_ORIENTAL-SEMI-SFS15R10GNF_C5175401.pdf
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