Green Molding Compound PNP Transistor PANJIT BC857B Ideal for General Purpose Amplifier Applications

Key Attributes
Model Number: BC857B
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
4uA
Pd - Power Dissipation:
330mW
Transition Frequency(fT):
200MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-50℃~+150℃
Mfr. Part #:
BC857B
Package:
SOT-23
Product Description

BC856 Series PNP General Purpose Transistors

The BC856 Series PNP General Purpose Transistors are designed for general-purpose amplifier applications. These transistors offer a collector current of up to -100mA and are complementary to the BC846/BC847/BC848/BC849 Series. They are lead-free and compliant with EU RoHS 2011/65/EU directive, utilizing a green molding compound as per IEC61249 Std. (Halogen Free).

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Green molding compound
  • Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free)

Technical Specifications

ParameterSymbolBC856BC857BC858BC859Units
Collector - Emitter VoltageVCEO-65-45-30-V
Collector - Base VoltageVCBO-80-50-30-V
Emitter - Base VoltageVEBO-5---V
Collector Current - ContinuousIC-100---mA
Peak Collector CurrentICM-200---mA
Max Power Dissipation (Note1)PTOT330---mW
Typical Thermal Resistance, Junction to AmbientRJA375---C/W
Operating Junction and Storage Temperature RangeTJ,TSTG-50 to 150---C
Collector - Emitter Breakdown Voltage (IC=-10mA, IB=0)V(BR)CEO-65-45-30-V
Collector - Base Breakdown Voltage (IC=-10A, IE=0)V(BR)CBO-80-50-30-V
Emitter - Base Breakdown Voltage (IE=-1A, IC=0)V(BR)EBO-5---V
Emitter-Base Cutoff Current (VEB=-5V)IEBO---100-nA
Collector-Base Cutoff Current (VCB=-30V, IE=0)ICBO---15-nA
Collector-Base Cutoff Current (VCB=-30V, IE=0,TJ=150 OC)ICBO---4-A
DC Current Gain (IC=-10A, VCE=-5V)hFE90-270----
DC Current Gain (IC=-2mA, VCE=-5V)hFE110-420180-520220-800--
Collector - Emitter Saturation Voltage (IC=-10mA, IB=-0.5mA)VCE(SAT)-0.3---V
Collector - Emitter Saturation Voltage (IC=-100mA, IB=-5mA)VCE(SAT)-0.65---V
Base - Emitter Saturation Voltage (IC=-10mA, IB=-0.5mA)VBE(SAT)-0.7---V
Base - Emitter Saturation Voltage (IC=-100mA, IB=-5mA)VBE(SAT)-0.9---V
Base - Emitter On Voltage (IC=-2mA, VCE=-5V)VBE(ON)-0.6---V
Base - Emitter On Voltage (IC=-10mA, VCE=-5V)VBE(ON)-0.75---V
Collector - Base Capacitance (VCB=-10V, IE=0, f=1MHz)C CB--4.5-pF
Current-Gain-Bandwidth Product (IC=-10mA, VCE=-5V,f=100MHz)FT--200-MHz

2409291808_PANJIT-BC857B_C268458.pdf

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