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quality Switching transistor PANJIT MMBT4401-AU R1 000A1 NPN type with 40 volts VCEO and plastic SOT-23 package factory
quality Switching transistor PANJIT MMBT4401-AU R1 000A1 NPN type with 40 volts VCEO and plastic SOT-23 package factory

Switching transistor PANJIT MMBT4401-AU R1 000A1 NPN type with 40 volts VCEO and plastic SOT-23 package

Key Attributes
Model Number: MMBT4401-AU_R1_000A1
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
250MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT4401-AU_R1_000A1
Package:
SOT-23
Product Description

MMBT4401-AU NPN General Purpose Switching Transistor

The MMBT4401-AU is an NPN epitaxial silicon planar design general purpose switching transistor. It features a collector-emitter voltage of 40V and a continuous collector current of 600mA. This device is AEC-Q101 qualified, lead-free in compliance with EU RoHS 2.0, and manufactured with a green molding compound as per IEC 61249 standard. It is housed in a SOT-23 plastic package.

Product Attributes

  • Brand: Panjit International Inc.
  • Product Type: NPN General Purpose Switching Transistor
  • Material: Epitaxial silicon, planar design
  • Certifications: AEC-Q101 qualified, EU RoHS 2.0 compliant, IEC 61249 standard
  • Color: Green (molding compound)
  • Package: SOT-23, Plastic

Technical Specifications

Parameter Symbol Value Units Condition
Collector - Emitter Voltage VCEO 40 V
Collector - Base Voltage VCBO 60 V
Emitter - Base Voltage VEBO 6 V
Collector Current - Continuous IC 600 mA
Max. Power Dissipation PTOT 225 mW Note 1
Thermal Resistance, Junction to Ambient RJA 556 C/W
Junction Temperature Range TJ -55 to 150 C
Storage Temperature Range TSTG -55 to 150 C
Collector - Emitter Breakdown Voltage V(BR)CEO 40 V IC = -10mA, IB = 0
Collector - Base Breakdown Voltage V(BR)CBO 60 V IE = -100A, IC = 0
Emitter - Base Breakdown Voltage V(BR)EBO 6 V IC = -100A, VCE = 0
Collector Cut-off Current ICEX 0.1 A VCE = 40V, VBE = -4.0V
Base Cut-off Current IBL 0.1 A VCE = 40V, VBE = -4.0V
DC Current Gain hFE 40 to 300 IC = 150mA, VCE = 10V
DC Current Gain hFE 100 to 300 IC = 10mA, VCE = 10V
DC Current Gain hFE 50 to 150 IC = 1mA, VCE = 10V
DC Current Gain hFE 20 to 50 IC = 0.1mA, VCE = 10V
Collector - Emitter Saturation Voltage VCE(SAT) 0.4 V IC = 500mA, IB = 50mA
Collector - Emitter Saturation Voltage VCE(SAT) 0.2 V IC = 150mA, IB = 15mA
Base - Emitter Saturation Voltage VBE(SAT) 1.1 V IC = 500mA, IB = 50mA
Base - Emitter Saturation Voltage VBE(SAT) 0.9 V IC = 150mA, IB = 15mA
Collector - Base Capacitance Cobo 5.6 pF VCB = 10V, f = 1MHz
Emitter - Base Capacitance Cebo 30 pF VEB = 5.0V, f = 1MHz
Transition Frequency fT 200 MHz VCE = 10V, IC = 100mA
Delay Time td 5 ns VCC = 30V, IB1 = 3mA, IC = 150mA
Rise Time tr 2 ns VCC = 30V, IB1 = 3mA, IC = 150mA
Storage Time ts 2 ns VCC = 30V, IB1 = 3mA, IB2 = -15mA, IC = 150mA
Fall Time tf 3 ns VCC = 30V, IB1 = 3mA, IB2 = -15mA, IC = 150mA

Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.


2411192357_PANJIT-MMBT4401-AU-R1-000A1_C6909008.pdf

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