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quality Enhancement Mode N Channel Power MOSFET ORIENTAL SEMI SFS06R045UNF for Switching and Low Driving Voltage factory
quality Enhancement Mode N Channel Power MOSFET ORIENTAL SEMI SFS06R045UNF for Switching and Low Driving Voltage factory

Enhancement Mode N Channel Power MOSFET ORIENTAL SEMI SFS06R045UNF for Switching and Low Driving Voltage

Key Attributes
Model Number: SFS06R045UNF
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
60A
RDS(on):
4.5mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.4V
Reverse Transfer Capacitance (Crss@Vds):
50.6pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.11nF
Pd - Power Dissipation:
31W
Gate Charge(Qg):
31.3nC@10V
Mfr. Part #:
SFS06R045UNF
Package:
PDFN3.3x3.3-8
Product Description

Product Overview

The SFS06R045UNF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, built on their unique device design for low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This series is specifically optimized for synchronous rectification systems requiring low driving voltage. Key applications include PD chargers, motor drivers, switching voltage regulators, DC-DC converters, and switched-mode power supplies.

Product Attributes

  • Brand: Oriental Semiconductor
  • Product Line: FSMOS
  • Technology: Enhancement Mode N-Channel Power MOSFET
  • Certifications: Pb Free, RoHS, Halogen Free

Technical Specifications

Parameter Symbol Value Unit Test Condition
Drain-source breakdown voltage BVDSS 60 V VGS=0 V, ID=250 A
Gate threshold voltage VGS(th) 1.3 - 2.4 V VDS=VGS, ID=250 A
Drain-source on-state resistance RDS(ON) 3.7 - 4.5 m VGS=10 V, ID=20 A
Drain-source on-state resistance RDS(ON) 5.3 - 6.5 m VGS=4.5 V, ID=20 A
Total gate charge Qg 31.3 nC VGS=10 V, VDS=30 V, ID=60 A
Continuous drain current ID 60 A TC=25 C
Pulsed drain current ID, pulse 180 A TC=25 C
Power dissipation PD 31 W TC=25 C
Single pulsed avalanche energy EAS 49 mJ VDD=50 V, VGS=10 V, L=0.3 mH, starting Tj=25 C
Thermal resistance, junction-case RJC 4.03 C/W
Thermal resistance, junction-ambient RJA 62 C/W Device mounted on 1 in 2 FR-4 board with 2oz. Copper, Ta=25 C
Package Type PDFN3.3*3.3-X
Package Marking SFS06R045UNF

Package Dimensions (PDFN3.3*3.3-X):

  • A: 0.50 - 0.60 mm
  • A1: - - 0.005 mm
  • A2: 0.10 - 0.25 mm
  • D: 3.20 - 3.40 mm
  • E: 3.20 - 3.40 mm
  • D1: 2.80 - 3.00 mm
  • E1: 1.91 - 2.11 mm
  • b: 0.25 - 0.35 mm
  • L: 0.30 - 0.40 mm
  • L1: 0.01 - 0.09 mm
  • k: 0.57 - 0.77 mm
  • e: 0.65 BSC

Ordering Information:

  • Package Type: PDFN3.3*3.3-X
  • Units/Reel: 5000
  • Reels/Inner Box: 1
  • Units/Inner Box: 5000
  • Inner Boxes/Carton Box: 8
  • Units/Carton Box: 40000

2410121806_ORIENTAL-SEMI-SFS06R045UNF_C5175402.pdf

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