AEC Q101 qualified PANJIT BC817-40-AU R1 000A1 NPN transistor suitable for amplifier applications
Key Attributes
Model Number:
BC817-40-AU_R1_000A1
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
330mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BC817-40-AU_R1_000A1
Package:
SOT-23
Product Description
Product Overview
The BC817-AU series are general-purpose NPN epitaxial silicon transistors designed for amplifier applications. They offer excellent DC current gain characteristics and are AEC-Q101 qualified. These transistors are lead-free, compliant with EU RoHS 2.0, and use a green molding compound as per IEC 61249 Standard. The PNP complement is the BC807-AU series.
Product Attributes
- Brand: Panjit International Inc.
- Origin: Silicon
- Material: Epitaxial type
- Certifications: AEC-Q101 qualified, EU RoHS 2.0 compliant, IEC 61249 Standard
- Color: Green molding compound
Technical Specifications
| Part Number | Collector-Emitter Voltage (VCEO) | Collector Current (DC) (IC) | Total Power Dissipation (PTOT) | hFE (VCE=1V, IC=100mA) | VCE(SAT) (IC=500mA, IB=50mA) | fT (IC=10mA, VCE=5V) | Package | Marking |
| BC817-16-AU | 45V | 500mA | 330mW | 100-250 | - | 100MHz | SOT-23 | 8A |
| BC817-25-AU | 45V | 500mA | 330mW | 160-400 | - | 100MHz | SOT-23 | 8B |
| BC817-40-AU | 45V | 500mA | 330mW | 250-600 | - | 100MHz | SOT-23 | 8C |
2410121321_PANJIT-BC817-40-AU-R1-000A1_C391421.pdf
Related Products
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
