Silicon planar design transistor PANJIT BC847C R1 00001 ideal for general purpose amplifier circuits
Key Attributes
Model Number:
BC847C_R1_00001
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
330mW
Transition Frequency(fT):
-
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BC847C_R1_00001
Package:
SOT-23
Product Description
NPN General Purpose Transistors
The BC846, BC847, BC848, BC849, and BC850 series are NPN epitaxial silicon planar design general purpose transistors. They are suitable for amplifier applications and are available in a SOT-23 plastic package. These transistors are lead-free in compliance with EU RoHS 2011/65/EU directive and feature a green molding compound as per IEC61249 Std. (Halogen Free).
Product Attributes
- Brand: Panjit International Inc.
- Material: Silicon, Planar Design
- Color: Green (molding compound)
- Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free)
Technical Specifications
| Parameter | Symbol | BC846 | BC847, BC850 | BC848, BC849 | Units |
| Collector - Emitter Voltage (VCEO) | VCEO | 65 | 45 | 30 | V |
| Collector - Base Voltage (VCBO) | VCBO | 80 | 50 | 30 | V |
| Emitter - Base Voltage (VEBO) | VEBO | 6 | 6 | 5 | V |
| Collector Current - Continuous (IC) | IC | 100 | mA | ||
| Peak Collector Current (ICM) | ICM | 200 | mA | ||
| Max Power Dissipation (PTOT) | PTOT | 330 | mW | ||
| Thermal Resistance, Junction to Ambient (RJA) | RJA | 375 | C/W | ||
| Operating Junction Temperature and Storage Temperature Range (TJ, TSTG) | TJ, TSTG | -55 to 150 | C | ||
Electrical Characteristics
| Parameter | Symbol | Test Condition | Suffix "A" | Suffix "B" | Suffix "C" | Units |
| Collector - Emitter Breakdown Voltage | V(BR)CEO | IC=10mA, IB=0 | 65 | 45 | 30 | V |
| BC846A/B | BC847A/B/C, BC850B/C | BC848A/B/C, BC849B/C | ||||
| - | - | - | ||||
| Collector - Base Breakdown Voltage | V(BR)CBO | IC=10uA, IE=0 | 80 | 50 | 30 | V |
| BC846A/B | BC847A/B/C, BC850B/C | BC848A/B/C, BC849B/C | ||||
| - | - | - | ||||
| Emitter - Base Breakdown Voltage | V(BR)EBO | IE=10uA, IC =0 | 6 | 6 | 5 | V |
| BC846A/B | BC847A/B/C, BC850B/C | BC848A/B/C, BC849B/C | ||||
| - | - | - | ||||
| Emitter-Base Cutoff Current | IEBO | VEB=5 | 100 | nA | ||
| Collector-Base Cutoff Current | ICBO | VCB=30V, IE=0 | 15 | nA | ||
| Collector-Base Cutoff Current (TJ=150C) | ICBO | VCB=30V, IE=0 | 5 | A | ||
| DC Current Gain | hFE | IC=10uA, VCE=5V | 90-270 | 150-420 | 270-800 | |
| BC846~BC848 | BC846~BC850 | BC847~BC850 | ||||
| Suffix "A" | Suffix "B" | Suffix "C" | ||||
| DC Current Gain | hFE | IC=2mA, VCE=5V | 110-200 | 180-290 | 220-450 | |
| BC846~BC848 | BC846~BC850 | BC847~BC850 | ||||
| Suffix "A" | Suffix "B" | Suffix "C" | ||||
| Collector - Emitter Saturation Voltage | VCE(SAT) | IC=10mA, IB =0.5mA | 0.25 | V | ||
| IC=100mA, IB =5mA | 0.6 | |||||
| Base - Emitter Saturation Voltage | VBE(SAT) | IC=10mA, IB =0.5mA | 0.7 | V | ||
| IC=100mA, IB =5mA | 0.9 | |||||
| Base - Emitter Voltage | VBE(ON) | IC=2mA, VCE=5V | 0.66 | V | ||
| IC=10mA, VCE=5V | 0.77 | |||||
| Collector - Base Capacitance | CBO | VCB=10V, IE=0, f=1MHz | 4.5 | pF | ||
2410121616_PANJIT-BC847C-R1-00001_C391423.pdf
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