NPN PNP transistor pair PANJIT BC847BPN-AU R1 000A1 dual surface mount in SOT-363 package for portable
Key Attributes
Model Number:
BC847BPN-AU_R1_000A1
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
NPN+PNP
Number:
1 NPN + 1 PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BC847BPN-AU_R1_000A1
Package:
SOT-363
Product Description
Product Overview
The BC847BPN-AU is a dual surface mount NPN/PNP transistor pair, offering complementary functionality in a single SOT-363 package. This device is ideal for portable applications where space is limited. It is designed for general-purpose amplification and is suitable for use in hand-held computers and PDAs. The transistors are electrically isolated and feature lead-free compliance with EU RoHS 2.0 and green molding compound as per IEC 61249 standard. It is also AEC-Q101 qualified.
Product Attributes
- Brand: Panjit International Inc.
- Package Type: SOT-363
- Certifications: AEC-Q101 qualified, EU RoHS 2.0 compliant, IEC 61249 standard
- Marking: 47P
Technical Specifications
| Parameter | Symbol | NPN Min | NPN Typ | NPN Max | NPN Units | PNP Min | PNP Typ | PNP Max | PNP Units | Conditions |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 45 | - | - | V | -45 | - | - | V | IC = 10mA |
| Collector-Emitter Breakdown Voltage | V(BR)CES | 50 | - | - | V | -50 | - | - | V | IC = 10uA |
| Collector-Base Breakdown Voltage | V(BR)CBO | - | - | - | V | - | - | - | V | IE = 10uA |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6.0 | - | - | V | -5.0 | - | - | V | IC = 1.0uA |
| Collector Cutoff Current | ICBO | - | - | 15 | nA | - | - | -15 | nA | VCB=30V, TJ = 150C |
| Collector Cutoff Current | ICBO | - | - | 5 | uA | - | - | -4.0 | uA | VCB=5V, TJ = 150C |
| Emitter Cutoff Current | IEBO | - | - | 100 | nA | - | - | -100 | nA | VEB=5V |
| DC Current Gain | hFE | 200 | - | 450 | - | 200 | - | 475 | - | VCE=5V, IC=2.0mA |
| Collector-Emitter Saturation Voltage | VCE(SAT) | - | 0.1 | 0.4 | V | - | -0.3 | -0.65 | V | IC=10mA, IB=0.5mA |
| Collector-Emitter Saturation Voltage | VCE(SAT) | - | - | - | V | - | - | - | V | IC=100mA, IB=5mA |
| Base-Emitter Saturation Voltage | VBE(SAT) | - | 0.58 | 0.75 | V | - | -0.6 | -0.75 | V | IC=10mA, IB=0.5mA |
| Base-Emitter Voltage | VBE | - | - | - | V | - | - | - | V | VCE=5V, IC=2.0mA |
| Gain-Bandwidth Product | fT | 100 | - | - | MHz | 100 | - | - | MHz | VCE=5V, IC=10mA |
| Collector-Base Capacitance | CBO | - | - | 1.5 | pF | - | - | 4.5 | pF | VCB=10V, f=1.0MHz |
| Emitter-Base Capacitance | EBO | - | - | 7 | pF | - | - | 11 | pF | VEB=0.5V, f=1.0MHz |
| Rating | Symbol | Value | Units | Conditions |
| Collector-Base Voltage | V CBO | 50 | V | Tj = 25C Unless otherwise noted |
| Collector-Emitter Voltage | V CEO | 45 | V | Tj = 25C Unless otherwise noted |
| Emitter-Base Voltage | V EBO | 6.0 | V | Tj = 25C Unless otherwise noted |
| Collector Current | I C | 100 | mA | Tj = 25C Unless otherwise noted |
| Total Power Dissipation | P D | 200 | mW | Tj = 25C Unless otherwise noted (Note 1) |
| Operating Junction Temperature Range | T J | -55 to +150 | C | - |
| Storage Temperature Range | T stg | -55 to +150 | C | - |
| Rating | Symbol | Value | Units | Conditions |
| Collector-Base Voltage | V CBO | -50 | V | Tj = 25C Unless otherwise noted |
| Collector-Emitter Voltage | V CEO | -45 | V | Tj = 25C Unless otherwise noted |
| Emitter-Base Voltage | V EBO | -5.0 | V | Tj = 25C Unless otherwise noted |
| Collector Current | I C | -100 | mA | Tj = 25C Unless otherwise noted |
2504101957_PANJIT-BC847BPN-AU-R1-000A1_C17291136.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
