Lead free green molding compound transistor PANJIT MMBT3904 R1 000Z8 compliant with EU RoHS2.0 directives
Key Attributes
Model Number:
MMBT3904_R1_000Z8
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
-
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT3904_R1_000Z8
Package:
SOT-23
Product Description
MMBT3904 NPN General Purpose Switching Transistor
The MMBT3904 is an NPN epitaxial silicon planar design transistor offering a collector-emitter voltage of 40V and a collector current of 200mA. It features a transition frequency greater than 300MHz. This device is lead-free, compliant with EU RoHS2.0 directives, and uses a green molding compound as per IEC61249 Std., making it halogen-free. It is suitable for general-purpose switching applications.
Product Attributes
- Brand: Panjit International Inc.
- Certifications: EU RoHS2.0 (2011/65/EU & 2015/865/EU directive), IEC61249 Std. (Halogen Free)
- Material: NPN epitaxial silicon, planar design
- Color: Green molding compound
Technical Specifications
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC = 0.1mA, IB = 0 | 40 | V | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | IC = 10uA, IE = 0 | 60 | V | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE = 0.1mA, IC = 0 | 6.0 | V | ||
| Collector Cut-off Current | ICEX | VCE = 30V, VEB = 0.3V | 50 | nA | ||
| Base Cut-off Current | IBL | VCE = 30V, VEB = 0.3V | 50 | nA | ||
| DC Current Gain | hFE | IC = 1mA, VCE = 10V | 100 | 300 | ||
| DC Current Gain | hFE | IC = 10mA, VCE = 10V | 100 | |||
| DC Current Gain | hFE | IC = 100mA, VCE = 10V | 60 | |||
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC = 10mA, IB = 1mA | 0.2 | 0.3 | V | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC = 50mA, IB = 5mA | 0.3 | V | ||
| Base-Emitter Saturation Voltage | VBE(SAT) | IC = 10mA, IB = 1mA | 0.65 | 0.95 | V | |
| Base-Emitter Saturation Voltage | VBE(SAT) | IC = 50mA, IB = 5mA | 0.56 | V | ||
| Transition Frequency | fT | IC = 10mA, VCE = 20V | 300 | MHz | ||
| Collector-Base Capacitance | Cobo | IE = 0, VCB = 5V, f = 1MHz | 0.4 | pF | ||
| Emitter-Base Capacitance | Cebo | IC = 0, VBE = 0.5V, f = 1MHz | 0.8 | pF | ||
| Delay Time | td | VCC = 3V, IC = 10mA, IB1 = 1mA | 3 | ns | ||
| Rise Time | tr | VCC = 3V, IC = 10mA, IB1 = 1mA | 3 | ns | ||
| Storage Time | ts | VCC = 3V, IC = 10mA, IB1 = 1mA, IB2 = -1mA | 200 | ns | ||
| Fall Time | tf | VCC = 3V, IC = 10mA, IB1 = 1mA, IB2 = -1mA | 50 | ns |
2410121957_PANJIT-MMBT3904-R1-000Z8_C124752.pdf
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