Power MOSFET ORIENTAL SEMI OSG55R074HSZF with 0.074 Milliohm On Resistance and Integrated Fast Recovery Diode

Name: Power MOSFET ORIENTAL SEMI OSG55R074HSZF with 0.074 Milliohm On Resistance and Integrated Fast Recovery Diode
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: OSG55R074HSZF
Availability: InStock

Key Attributes

Model Number: OSG55R074HSZF

Product Custom Attributes

Drain To Source Voltage:

600V

Current - Continuous Drain(Id):

47A

Operating Temperature -:

-55℃~+150℃

RDS(on):

74mΩ@10V

Gate Threshold Voltage (Vgs(th)):

4.5V@1mA

Reverse Transfer Capacitance (Crss@Vds):

9.3pF@50V

Number:

Input Capacitance(Ciss):

3.9155nF

Pd - Power Dissipation:

278W

Gate Charge(Qg):

67.7nC@10V

Mfr. Part #:

OSG55R074HSZF

Package:

TO-247-3

Product Description

Product Overview

The OSG55R074HSZF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS Z series. It leverages charge balance technology for exceptional low on-resistance and reduced gate charge, minimizing conduction loss and enhancing switching performance. This series integrates a fast recovery diode (FRD) for minimized reverse recovery time, making it ideal for resonant switching topologies. Applications include PC power, telecom power, server power, EV chargers, and motor drivers.

Product Attributes

Brand: Oriental Semiconductor
Product Line: GreenMOS Z series
Technology: Charge Balance Technology
Diode: Integrated Fast Recovery Diode (FRD)
Certifications: Pb Free, RoHS, Halogen Free

Technical Specifications

Parameter	Symbol	Value	Unit	Test Condition
Drain-source voltage (min @ Tj(max))	VDS	600	V	Tj(max)
Pulsed drain current	ID, pulse	141	A	TC=25 C
RDS(ON) (max @ VGS=10V)	RDS(ON)	0.074	m	VGS=10 V, ID=23.5 A
Total gate charge	Qg	67.7	nC	VGS=10 V, VDS=400 V, ID=16 A
Drain-source breakdown voltage	BVDSS	550	V	VGS=0 V, ID=1 mA
Gate threshold voltage	VGS(th)	3.5 - 4.5	V	VDS=VGS, ID=1 mA
Continuous drain current (TC=25 C)	ID	47	A	TC=25 C
Continuous drain current (TC=100 C)	ID	30	A	TC=100 C
Continuous diode forward current (TC=25 C)	IS	47	A	TC=25 C
Power dissipation (TC=25 C)	PD	278	W	TC=25 C
Single pulsed avalanche energy	EAS	1000	mJ	VDD=100 V, VGS=10 V, L=60 mH, starting Tj=25 C
Thermal resistance, junction-case	RJC	0.45	C/W	-
Thermal resistance, junction-ambient	RJA	62	C/W	Ta=25 C (on 1 in FR-4 board)
Input capacitance	Ciss	3915.5	pF	VGS=0 V, VDS=50 V, =100 KHz
Output capacitance	Coss	348.5	pF	VGS=0 V, VDS=50 V, =100 KHz
Reverse transfer capacitance	Crss	9.3	pF	VGS=0 V, VDS=50 V, =100 KHz
Diode forward voltage	VSD	1.4	V	IS=47 A, VGS=0 V
Reverse recovery time	trr	176	ns	IS=16 A, di/dt=100 A/s
Reverse recovery charge	Qrr	1.1	uC	IS=16 A, di/dt=100 A/s
Peak reverse recovery current	Irrm	11.2	A	IS=16 A, di/dt=100 A/s
Package Marking	-	OSG55R074HSZ	-	TO247

Package Information (TO247-C)

Symbol	mm (Min)	mm (Nom)	mm (Max)
A	4.80	5.00	5.20
A1	2.21	2.41	2.59
A2	1.85	2.00	2.15
b	1.11	1.21	1.36
b2	1.91	2.01	2.21
b4	2.91	3.01	3.21
c	0.51	0.61	0.75
D	20.80	21.00	21.30
D1	16.25	16.55	16.85
E	15.50	15.80	16.10
E1	13.00	13.30	13.60
E2	4.80	5.00	5.20
E3	2.30	2.50	2.70
e	5.44BSC
L	19.82	19.92	20.22
L1	-	-	4.30
P	3.40	3.60	3.80
P1	-	-	7.30
S	6.15BSC

Package Information (TO247-J)

Symbol	mm (Min)	mm (Nom)	mm (Max)
A	4.90	5.00	5.20
A1	2.31	2.41	2.59
A2	1.90	2.00	2.15
b	1.16	1.21	1.36
b1	1.15	-	-
b2	1.96	2.01	2.21
b3	1.95	-	-
b4	2.96	3.01	3.21
b5	2.96	-	-
c	0.59	0.61	0.75
D	20.90	21.00	21.30
D1	16.25	16.55	16.85
E	15.70	15.80	16.10
E1	13.10	13.30	13.60
E2	4.40	5.00	5.20
E3	2.40	2.50	2.70
e	5.436BSC
L	19.80	19.92	20.22
L1	-	-	4.30
M	-	0.35	-
P	3.40	3.60	3.80
P1	7.00	-	-
P2	2.40	-	7.30
Q	5.60	-	-
S	6.05	-	7.30
T	-	0.80	-
U	6.00BSC

Ordering Information

Package Type	Units/Tube	Tubes/Inner Box	Units/Inner Box	Inner Boxes/Carton Box	Units/Carton Box
TO247-C	30	11	330	6	1980
TO247-J	30	20	600	5	3000

2411220601_ORIENTAL-SEMI-OSG55R074HSZF_C2762899.pdf

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