PNJIT BC857BS R1 00001 PNP epitaxial silicon dual transistor suitable general purpose amplifier applications
Key Attributes
Model Number:
BC857BS_R1_00001
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
2 PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
BC857BS_R1_00001
Package:
SOT-363
Product Description
BC857BS PNP GENERAL PURPOSE DUAL TRANSISTORS
The BC857BS is a PNP epitaxial silicon, planar design dual transistor suitable for general purpose amplifier applications. It features lead-free compliance with EU RoHS 2.0 and a green molding compound. The device is housed in a SOT-363 plastic package with solderable terminals per MIL-STD-750, Method 2026.
Product Attributes
- Brand: Panjit International Inc.
- Material: PNP epitaxial silicon, planar design
- Color: Green (molding compound)
- Certifications: EU RoHS 2.0 compliant, IEC 61249 standard
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| POWER ABSOLUTE MAXIMUM RATINGS | ||||||
| Collector - Emitter Voltage | VCEO | -45 | V | |||
| Collector - Base Voltage | VCBO | -50 | V | |||
| Emitter - Base Voltage | VEBO | -5.0 | V | |||
| Collector Current | IC | Continuous | -100 | mA | ||
| Power Dissipation | PD | On FR-4 board 70 x 60 x 1mm | 0.3 | W | ||
| THERMAL CHARACTERISTICS | ||||||
| Junction to Ambient Thermal Resistance | RJA | Note 1 | 223 | C/W | ||
| Junction Temperature | TJ | -55 | 150 | C | ||
| Storage Temperature | TSTSG | -55 | 150 | C | ||
| ELECTRICAL CHARACTERISTICS (TJ=25C, unless otherwise noted) | ||||||
| OFF CHARACTERISTICS | ||||||
| Collector - Emitter Breakdown Voltage | V(BR)CEO | IC=-10mA | -45 | V | ||
| Collector - Emitter Breakdown Voltage | V(BR)CES | IC=-10uA, VEB=0 | -50 | V | ||
| Collector - Base Breakdown Voltage | V(BR)CBO | IC=-10uA | -50 | V | ||
| Emitter - Base Breakdown Voltage | V(BR)EBO | IE=-1uA | -5.0 | V | ||
| Collector Cutoff Current | ICBO | VCB=-30V | -5.0 | nA | ||
| Collector Cutoff Current | ICBO | VCB=-30V, TA=150C | -15 | uA | ||
| ON CHARACTERISTICS | ||||||
| DC Current Gain | hFE | IC=-10uA, VCE=-5V | 150 | |||
| DC Current Gain | hFE | IC=-2.0mA, VCE=-5V | 290 | 475 | ||
| Collector - Emitter Saturation Voltage | VCE(SAT) | IC=-10mA, IB=-0.5mA | -0.3 | V | ||
| Collector - Emitter Saturation Voltage | VCE(SAT) | IC=-100mA, IB=-5.0mA | -0.65 | V | ||
| Base - Emitter Saturation Voltage | VBE(SAT) | IC=-10mA, IB=-0.5mA | -0.7 | V | ||
| Base - Emitter Saturation Voltage | VBE(SAT) | IC=-100mA, IB=-5.0mA | -0.9 | V | ||
| Base - Emitter Voltage | VBE(ON) | IC=-2mA, VCE=-5.0V | -0.6 | V | ||
| Base - Emitter Voltage | VBE(ON) | IC=-10mA, VCE=-5.0V | -0.75 | -0.82 | V | |
| SMALL-SIGNAL CHARACTERISTICS | ||||||
| Current-Gain-Bandwidth Product | fT | IC=-10mA, VCE=-5.0Vdc, f=100MHz | 100 | MHz | ||
| Output Capacitance | Cobo | VCB=-10V, f=1.0MHz | 4.5 | pF | ||
| Noise Figure | NF | IC=0.2mA, VCE=5.0Vdc, RS=2.0k, f=1.0kHz, BW=200Hz | 10 | dB | ||
2410121549_PANJIT-BC857BS-R1-00001_C391425.pdf
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