switching transistor PANJIT 2SC2222H featuring planar design and halogen free green molding compound
Key Attributes
Model Number:
2SC2222H
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
10nA
Pd - Power Dissipation:
1.1W
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SC2222H
Package:
SOT-89
Product Description
Product Overview
The P2SC2222H is an NPN general-purpose switching transistor with a planar design, suitable for various electronic applications. It features a collector-emitter voltage of 40V and a collector current of 600mA, offering reliable performance for switching tasks. This transistor is lead-free and compliant with EU RoHS2.0 directives, utilizing a green molding compound that is halogen-free.
Product Attributes
- Brand: Panjit International Inc.
- Material: NPN epitaxial Silicon, Planar Design
- Certifications: EU RoHS2.0 (2011/65/EU & 2015/865/EU directive), IEC61249 Std. (Halogen Free)
- Color: Green molding compound
- Marking: C2H
Technical Specifications
| Parameter | Symbol | Test Condition | Limit | Units |
| Maximum Ratings and Thermal Characteristics | ||||
| Collector-Base Voltage | VCBO | 75 | V | |
| Collector-Emitter Voltage | VCEO | 40 | V | |
| Emitter-Base Voltage | VEBO | 6 | V | |
| Collector Current (DC) | IC | 600 | mA | |
| Collector Current (Pulse) | ICP | 800 | mA | |
| Total Power Dissipation | PTOT | 1.1 | W | |
| Junction to Ambient Thermal Resistance | RJA | (Note1) | 250 | C/ W |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55~150 | C | |
| Electrical Characteristics | ||||
| Collector-Emitter Breakdown Voltage | BVCEO | IC= 1.0mA, IB= 0A | 40 | V |
| Collector-Base Breakdown Voltage | BVCBO | IC= 10uA, IE= 0A | 75 | V |
| Emitter-Base Breakdown Voltage | BVEBO | IE= 10uA, IC= 0A | 6 | V |
| Collector-Base Cutoff Current | ICBO | VCB= 60V, IE= 0A | 10 | nA |
| Emitter-Base Cutoff Current | IEBO | VEB= 3V | 10 | nA |
| Collector-Emitter Cutoff Current | ICES | VCES= 60V | 10 | nA |
| DC Current Gain | hFE | VCE= 10V, IC= 0.1mA | 35 | - |
| DC Current Gain | hFE | VCE= 10V, IC= 1mA | 50 | - |
| DC Current Gain | hFE | VCE= 10V, IC= 10mA | 75 | - |
| DC Current Gain | hFE | VCE= 10V, IC= 150mA | 100-300 | - |
| DC Current Gain | hFE | VCE= 1V, IC= 150mA | 50 | - |
| DC Current Gain | hFE | VCE= 10V, IC= 500mA | 40 | - |
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC= 150mA, IB= 15mA | 0.3 | V |
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC= 500mA, IB= 50mA | 1.0 | V |
| Base-Emitter Saturation voltage | VBE(SAT) | IC= 150mA, IB= 15mA | 1.2 | V |
| Base-Emitter Saturation voltage | VBE(SAT) | IC= 500mA, IB= 50mA | 2.0 | V |
| Collector-Base Capacitance | CCBO | VCB= 10V, f=1MHz | 8 | pF |
| Emitter-Base Capacitance | CEBO | VCB= 0.5V, f=1MHz | 25 | pF |
| Delay Time | td | VCC= 3V, VBE= -5V, IC= 150mA, IB= 15mA | 10 | nS |
| Rise Time | tr | 25 | nS | |
| Storage Time | ts | VCC= 30V, IC= 150mA, IB1 = IB2 = 15mA | 225 | nS |
| Fall Time | tf | 60 | nS | |
| Turn-on Time | ton | IC= 150mA,Ibon =15mA, Iboff = -15mA | 35 | nS |
| Turn-off Time | toff | 250 | nS | |
| Transition Frequency | fT | VCE = 10 V; IC = 20mA | 300 | MHz |
2410121341_PANJIT-2SC2222H_C268439.pdf
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