PANJIT MMBT2907A-AU R1 000A2 epitaxial silicon transistor suitable for switching and general purpose
Key Attributes
Model Number:
MMBT2907A-AU_R1_000A2
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
200MHz
Type:
PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT2907A-AU_R1_000A2
Package:
SOT-23
Product Description
MMBT2907A-AU PNP General Purpose Switching Transistor
The MMBT2907A-AU is a PNP epitaxial silicon, planar design general purpose switching transistor. It is AEC-Q101 qualified, lead-free in compliance with EU RoHS 2.0, and uses a green molding compound as per IEC 61249 standard. It is suitable for applications requiring a collector-emitter voltage of -60V and a collector current of -600mA.
Product Attributes
- Brand: Panjit International Inc.
- Origin: Not specified
- Material: Epitaxial silicon, planar design
- Color: Green molding compound
- Certifications: AEC-Q101 qualified, EU RoHS 2.0 compliant
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -60 | V | |||
| Collector-Base Voltage | VCBO | -60 | V | |||
| Emitter-Base Voltage | VEBO | -5.0 | V | |||
| Collector Current-Continuous | IC | -600 | mA | |||
| Max Power Dissipation (Note 1) | PTOT | 225 | mW | |||
| Storage Temperature | TSTG | -55 | 150 | C | ||
| Junction Temperaure | TJ | -55 | 150 | C | ||
| Thermal Resistance, Junction to Ambient | RJA | 556 | C / W | |||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC=-10mA,IB=0 | -60 | V | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | IC=-10A,IE=0 | -60 | V | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE=-10A,IC=0 | -5.0 | V | ||
| Base Cutoff Current | IBL | VCE=-30V,VEB=-0.5V | -50 | nA | ||
| Collector Cutoff Current | ICEX | VCE=-30V,VEB=-0.5V | -50 | nA | ||
| ICBO | VCE=-50V,IE=0 | -10 | nA | |||
| VCE=-50V,IE=0 TJ=125OC | -10 | A | ||||
| DC Current Gain | hFE | IC=-0.1mA,VCE=-10V | 75 | 300 | ||
| IC=-1.0mA,VCE=-10V | 100 | |||||
| IC=-10mA,VCE=-10V | 100 | |||||
| IC=-150mA,VCE=-10V | 100 | |||||
| IC=-500mA,VCE=-10V | 50 | |||||
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC=-150mA,IB=-15mA | -0.4 | V | ||
| IC=-500mA,IB=-50mA | -1.6 | V | ||||
| Base-Emitter Saturation Voltage | VBE(SAT) | IC=-150mA,IB=-15mA | -1.3 | V | ||
| IC=-500mA,IB=-50mA | -2.6 | V | ||||
| Collector-Base Capacitance | CCBO | VCB=-10V,IE=0,f=1MHz | 8.0 | pF | ||
| Emitter-Base Capacitance | CEBO | VCB=-2V,IC=0,f=1MHz | 30 | pF | ||
| Current Gain-Bandwidth Product | FT | IC=-50mA,VCE=-20V, f=100MHz | 200 | MHz | ||
| Turn-On Time | ton | VCC=-30V,VBE=-0.5V, IC=-150mA,IB=-15mA | 45 | ns | ||
| Delay Time | td | VCC=-30V,VBE=-0.5V, IC=-150mA,IB=-15mA | 10 | ns | ||
| Rise Time | tr | VCC=-30V,VBE=-0.5V, IC=-150mA,IB1=-15mA | 40 | ns | ||
| Turn-Off Time | toff | VCC=-6V,IC=-150mA, IB1=IB2=-15mA | 100 | ns | ||
| Storage Time | ts | VCC=-6V,IC=-150mA, IB1=IB2=-15mA | 80 | ns | ||
| Fall Time | tf | VCC=-6V,IC=-150mA, IB1=IB2=-15mA | 30 | ns |
2410122022_PANJIT-MMBT2907A-AU-R1-000A2_C5354954.pdf
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