1500V N channel MOSFET orisilicon OSM2N150 designed for load switching and PWM control in power electronics
Key Attributes
Model Number:
OSM2N150
Product Custom Attributes
Mfr. Part #:
OSM2N150
Package:
TO-220-FB
Product Description
Product Overview
The OSM2N150 is a 1500V N-channel MOSFET device with a maximum on-resistance of 13 at 10V gate-source voltage and a continuous current of 2A. It features low gate charge, low gate voltage, and high current conduction capability, making it suitable for applications such as load switching and PWM control. The OSM2N150 is available in TO-263 and TO-220-FB packages.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Source-Source Breakdown Voltage | BVDSS | VGS=0V, ISS =250A | 1500 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDSS =1500V, VGS =0V | 10 | A | ||
| Gate-Body leakage current | IGSS | VDSS =0V, VGS = + 30V | 0.1 | A | ||
| Gate-Body leakage current | IGSS | VDSS =0V, VGS = - 30V | -0.1 | A | ||
| Gate Threshold Voltage | VGS(TH) | VDSS = VGS, ISS =150A | 3 | 5 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ISS =1A | 13 | |||
| Diode Forward Voltage | VFSS | VGS=0V, IF=2A | 1.3 | V | ||
| Input Capacitance | CISS | VGS=0V, VDS=25V, f=1MHz | 580 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS=25V, f=1MHz | 50 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS=25V, f=1MHz | 11.5 | pF | ||
| Total Gate Charge | Qg | VGS=0 to 10V, VDS=1200V, ISS=2A | 28 | nC | ||
| Gate Source Charge | Qgs | VGS=0 to 10V, VDS=1200V, ISS=2A | 10 | nC | ||
| Gate Drain Charge | Qgd | VGS=0 to 10V, VDS=1200V, ISS=2A | 8 | nC | ||
| Turn-On Delay Time | tD(ON) | VDSS=100V, ID=2A,RG=25 | 12 | ns | ||
| Turn-On Rise Time | tr | VDSS=100V, ID=2A,RG=25 | 20 | ns | ||
| Turn-Off Delay Time | tD(OFF) | VDSS=100V, ID=2A,RG=25 | 72 | ns | ||
| Turn-Off Fall Time | tf | VDSS=100V, ID=2A,RG=25 | 52 | ns | ||
| Thermal Resistance | JA | TO-263 | 62.5 | C/W | ||
| Thermal Resistance | JC | TO-263 | 0.96 | C/W | ||
| Thermal Resistance | JA | TO-220-FB | 62.5 | C/W | ||
| Thermal Resistance | JC | TO-220-FB | 0.89 | C/W |
2511131508_orisilicon-OSM2N150_C49188045.pdf
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