Super Junction Power MOSFET OSEN OSH65R065 650V with Improved dvdt and Low FOM RDSon Characteristics
Key Attributes
Model Number:
OSH65R065
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
53A
RDS(on):
67mΩ@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
5pF
Output Capacitance(Coss):
95pF
Input Capacitance(Ciss):
4.2nF
Pd - Power Dissipation:
385W
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
OSH65R065
Package:
TO-3PNB
Product Description
OSH65R065 650V Super-Junction Power MOSFET
The OSH65R065 is a 650V super-junction Power MOSFET designed for high-efficiency applications. It features very low FOM RDS(on), 100% avalanche tested, RoHS compliance, and improved dv/dt capability for high ruggedness. This MOSFET is ideal for use in high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Model: OSH65R065
- Certifications: RoHS compliant
Technical Specifications
| Symbol | Parameters | Ratings | Unit | Conditions |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| VDSS | Drain-Source Voltage | 650 | V | |
| VGS | Gate-Source Voltage-Continuous | 30 | V | |
| ID | Drain Current-Continuous (Note 2) | 53 | A | |
| IDM | Drain Current-Single Plused (Note 1) | 212 | A | |
| PD | Power Dissipation (Note 2) | 385 | W | |
| Tj Max. | Operating junction temperature | 150 | ||
| Electrical Characteristics | ||||
| BVDSS | Drain-Source Breakdown Voltage (Note 1) | 650 | V | ID=250A VGS=0VTJ=25C |
| VGS(th) | Gate Threshold Voltage | 3.0 -- 5.0 | V | VDS=VGSID=250A |
| RDS(on) | Drain-Source On-Resistance | -- 0.065 0.067 | VGS=10VID=26.5A | |
| IGSS | Gate-Body Leakage Current | -- -- 100 | nA | VGS=30VVDS=0 |
| IDSS | Zero Gate Voltage Drain Current | -- -- 11 | A | VDS=650VVGS=0 |
| gfs | Forward Transconductance | -- 38 -- | S | VDS=40VID=25A |
| Switching Characteristics | ||||
| Td(on) | Turn-On Delay Time | -- 20.5 -- | ns | VDS=480V ID=26.5A RG=20Note 2 |
| Tr | Rise Time | -- 25 -- | ns | |
| Td(off) | Turn-Off Delay Time | -- 80 -- | ns | |
| Tf | Fall Time | -- 35 -- | ns | |
| Qg | Total Gate Charge | -- 20 -- | nC | VDS=480V VGS=10V ID=26.5ANote 2 |
| Qgs | Gate-Source Charge | -- 25 -- | nC | |
| Qgd | Gate-Drain Charge | -- 80 -- | nC | |
| Dynamic Characteristics | ||||
| Ciss | Input Capacitance | -- 4200 -- | pF | VDS=25VVGS=0 f=1MHz |
| Coss | Output Capacitance | -- 95 -- | pF | |
| Crss | Reverse Transfer Capacitance | -- 5 -- | pF | |
| Diode Characteristics | ||||
| IS | Continuous Drain-Source Diode Forward Current (Note 2) | -- -- 53 | A | |
| VSD | Diode Forward On-Voltage | -- -- 1.2 | V | IS=26.5AVGS=0 |
| Thermal Characteristics | ||||
| Rth(j-c) | Thermal Resistance, Junction to Case | -- -- 0.32 | /W | |
Notes:
Note 1: Repetitive Rating : Pulse width limited by maximum junction temperature
Note 2: Pulse test: PW <= 300us , duty cycle <= 2%
2410121732_OSEN-OSH65R065_C20607795.pdf
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