450V N CHANNEL MOSFET OSEN OSD740 featuring improved dv dt capability and fast switching for industrial
Key Attributes
Model Number:
OSD740
Product Custom Attributes
Drain To Source Voltage:
450V
Current - Continuous Drain(Id):
11A
RDS(on):
420mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
27pF
Input Capacitance(Ciss):
1.1nF
Output Capacitance(Coss):
220pF
Pd - Power Dissipation:
56W
Mfr. Part #:
OSD740
Package:
TO-252
Product Description
OSEN OSD740 450V N-CHANNEL MOSFET
The OSEN OSD740 is a 450V N-CHANNEL MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance with low-level drive, tested avalanche energy, and improved dv/dt capability for high ruggedness. This MOSFET is ideal for use in high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Origin: China (http://www.osen.net.cn)
- Publication Order Number: OSD740
- Revision: Rev 21.2.10
- Package: TO-252
Technical Specifications
| Parameters | Unit | Conditions | Min | Typ | Max | |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage (VDSS) | V | 450 | ||||
| Gate-Source Voltage-Continuous (VGS) | V | ±30 | ||||
| Drain Current-Continuous (ID) (Note 2) | A | 11 | ||||
| Drain Current-Single Pulsed (IDM) (Note 1) | A | 44 | ||||
| Power Dissipation (PD) (Note 2) | W | 56 | ||||
| Max.Operating junction temperature (Tj) | 150 | |||||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage Current (BVDSS) (Note 1) | V | ID=250µA, VGS=0V, TJ=25°C | 450 | -- | -- | |
| Gate Threshold Voltage (VGS(th)) | V | VDS=VGS, ID=250µA | 2.0 | -- | 4.0 | |
| Drain-Source On-Resistance (RDS(on)) | Ω | VGS=10V, ID=5A | -- | 0.42 | -- | |
| Gate-Body Leakage Current (IGSS) | nA | VGS=±30V, VDS=0 | -- | -- | ±100 | |
| Zero Gate Voltage Drain Current (IDSS) | µA | VDS=430V, VGS=0 | -- | -- | 1 | |
| Forward Transconductance (gfs) | S | VDS=15V, ID=5A | 5.8 | -- | -- | |
| Switching Characteristics | ||||||
| Turn-On Delay Time (td(on)) | ns | VDS=250V, ID=11A, RG=25Ω | -- | 17 | -- | |
| Rise Time (Tr) | ns | -- | 10 | -- | ||
| Turn-Off Delay Time (td(off)) | ns | -- | 10 | -- | ||
| Fall Time (Tf) | ns | -- | 10 | -- | ||
| Total Gate Charge (Qg) | nC | VDS=250V, VGS=10V, ID=11A | -- | 35 | 50 | |
| Gate-Source Charge (Qgs) | nC | -- | 11 | -- | ||
| Gate-Drain Charge (Qgd) | nC | -- | 12 | -- | ||
| Dynamic Characteristics | ||||||
| Input Capacitance (Ciss) | pF | VDS=25V, VGS=0, f=1MHz | -- | 1100 | -- | |
| Output Capacitance (Coss) | pF | -- | 220 | -- | ||
| Reverse Transfer Capacitance (Crss) | pF | -- | 27 | -- | ||
| Diode Forward On-Voltage (VSD) | V | IS=5A, VGS=0 | -- | -- | 1.4 | |
| Thermal Resistance, Junction to Case (Rth(j-c)) | °C/W | -- | -- | 2.23 | ||
Notes:
Note 1: Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2: Pulse test: PW <= 300µs, duty cycle <= 2%.
2410121732_OSEN-OSD740_C20607780.pdf
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