Power MOSFET OSEN OSPF65R650 650V Super Junction Device with Low Figure of Merit and RoHS Compliance
Key Attributes
Model Number:
OSPF65R650
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
RDS(on):
650mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
3pF
Input Capacitance(Ciss):
500pF
Output Capacitance(Coss):
45pF
Pd - Power Dissipation:
28W
Gate Charge(Qg):
10nC@10V
Mfr. Part #:
OSPF65R650
Package:
TO-220F
Product Description
OSPF65R650 650V Super-Junction Power MOSFET
The OSPF65R650 is a 650V super-junction Power MOSFET designed for high-efficiency applications. It features very low FOM (Figure of Merit) RDS(on) for reduced conduction losses, 100% avalanche tested for enhanced ruggedness, and improved dv/dt capability. This MOSFET is RoHS compliant.
Applications
- High efficiency switch mode power supplies
- Power factor correction
- Electronic lamp ballast
Product Attributes
- Brand: OSEN
- Publication Order Number: OSPF65R650
- Revision: 21.2.10
- Certifications: RoHS compliant
Technical Specifications
| Parameters | Ratings | Unit | Conditions |
| VDSS: Drain-Source Voltage | 650 | V | |
| VGS: Gate-Source Voltage-Continuous | ±30 | V | |
| ID: Drain Current-Continuous (Note 2) | 7 | A | |
| IDM: Drain Current-Single Pulsed (Note 1) | 22.5 | A | |
| PD: Power Dissipation (Note 2) | 28 | W | |
| Tj Max.: Operating junction temperature | 150 | °C | |
| BVDSS: Drain-Source Breakdown Voltage (Note 1) | 650 | V | ID=250µA, VGS=0V, TJ=25°C |
| VGS(th): Gate Threshold Voltage | 2.0 - 4.0 | V | VDS=VGS, ID=250µA |
| RDS(on): Drain-Source On-Resistance | 0.55 - 0.65 | Ω | VGS=10V, ID=3.5A |
| IGSS: Gate-Body Leakage Current | ±100 | nA | VGS=±30V, VDS=0 |
| IDSS: Zero Gate Voltage Drain Current | 1 | µA | VDS=650V, VGS=0 |
| Td(on): Turn-On Delay Time | 20 | ns | VDS=300V,ID=3.5A, RG=25Ω |
| Tr: Rise Time | 10 | ns | |
| Td(off): Turn-Off Delay Time | 25 | ns | |
| Tf: Fall Time | 25 | ns | |
| Qg: Total Gate Charge | 10 | nC | VDS=480V,VGS=10V, ID=3.5A |
| Qgs: Gate-Source Charge | 4.0 | nC | |
| Qgd: Gate-Drain Charge | 5.0 | nC | |
| Ciss: Input Capacitance | 500 | pF | VDS=50V, VGS=0, f=1MHz |
| Coss: Output Capacitance | 45 | pF | |
| Crss: Reverse Transfer Capacitance | 3 | pF | |
| IS: Continuous Drain-Source Diode Forward Current | 7 | A | |
| VSD: Diode Forward On-Voltage | 1.3 | V | IS=3.5A, VGS=0 |
| Rth(j-c): Thermal Resistance, Junction to Case | 4.46 | °C/W |
Note 1: Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2: Pulse test: PW <= 300µs, duty cycle <= 2%.
2410121732_OSEN-OSPF65R650_C20607853.pdf
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