high voltage 650V power mosfet OSEN OSPF65R380 with improved dv dt capability and low on resistance
Key Attributes
Model Number:
OSPF65R380
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
11A
RDS(on):
380mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
7pF
Output Capacitance(Coss):
110pF
Input Capacitance(Ciss):
800pF
Pd - Power Dissipation:
30W
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
OSPF65R380
Package:
TO-220F
Product Description
OSPF65R380 650V Super-Junction Power MOSFET
The OSPF65R380 is a 650V super-junction Power MOSFET designed for high-efficiency applications. It features very low FOM RDS(on), 100% avalanche tested, improved dv/dt capability, and high ruggedness. This MOSFET is suitable for use in high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Publication Order Number: OSPF65R380
- Rev: 21.2.10
- Certifications: RoHS compliant
Technical Specifications
| Parameters | Unit | Ratings | Conditions |
| VDSS Drain-Source Voltage | V | 650 | |
| VGS Gate-Source Voltage-Continuous | V | 30 | |
| ID Drain Current-Continuous | A | 11 | Note 2 |
| IDM Drain Current-Single Pulsed | A | 33 | Note 1 |
| PD Power Dissipation | W | 30 | Note 2 |
| Tj Max.Operating junction temperature | 150 | ||
| BVDSS Drain-Source Breakdown Voltage | V | 650 | ID=250A VGS=0VTJ=25C |
| VGS(th) Gate Threshold Voltage | V | 2.5 -- 4.5 | VDS=VGSID=250A |
| RDS(on) Drain-Source On-Resistance | -- 0.34 0.38 | VGS=10VID=5A | |
| IGSS Gate-Body Leakage Current | nA | -- 100 | VGS=30VVDS=0 |
| IDSS Zero Gate Voltage Drain Current | A | -- 1 | VDS=650VVGS=0 |
| Td(on) Turn-On Delay Time | ns | -- 24 -- | VDS=300V,ID=11A RG=25 |
| Tr Rise Time | ns | -- 54 -- | |
| Td(off) Turn-Off Delay Time | ns | -- 89 -- | |
| Tf Fall Time | ns | -- 25 -- | |
| Qg Total Gate Charge | nC | -- 19 -- | VDS=480V,VGS=10V ID=11A |
| Qgs Gate-Source Charge | nC | -- 4.0 -- | |
| Qgd Gate-Drain Charge | nC | -- 6.0 -- | |
| Ciss Input Capacitance | pF | -- 800 -- | VDS=50VVGS=0 f=1MHz |
| Coss Output Capacitance | pF | -- 110 -- | |
| Crss Reverse Transfer Capacitance | pF | -- 7 -- | |
| IS Continuous Drain-Source Diode Forward Current | A | -- 11 | |
| VSD Diode Forward On-Voltage | V | -- 0.9 1.2 | IS=11AVGS=0 |
| Rth(j-c) Thermal Resistance, Junction to Case | /W | -- 4.2 |
Note 1: Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2: Pulse test: PW <= 300us, duty cycle <= 2%.
2410121732_OSEN-OSPF65R380_C20607850.pdf
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