R O US1M diode featuring fast recovery and low switching losses for improved power supply efficiency
Key Attributes
Model Number:
US1M
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Leakage Current (Ir):
2uA@1000V
Reverse Recovery Time (trr):
75ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
1kV
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
1.7V@1A
Current - Rectified:
1A
Mfr. Part #:
US1M
Package:
SMA(DO-214AC)
Product Description
Product Overview
The US1A THRU US1M is a surface mount high-efficiency rectifier designed for high-frequency rectification and freewheeling applications in switching mode converters and inverters. It features a low-profile package ideal for automated placement, glass-passivated chip junction, super-fast reverse recovery time, low switching losses, high efficiency, and high forward surge capability. Suitable for consumer, computer, automotive, and telecommunication sectors.
Product Attributes
- Brand:
- Website: www.ichjc.com
- Origin: Zhuhai Hongjiacheng Technology co., Ltd
- Package: DO-214AC(SMA)
- Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
- Polarity: Cathode line denotes the cathode end
- Molding compound: Meets UL 94V-0 flammability rating, RoHS-compliant, halogen-free
Technical Specifications
| Parameter | Symbol | Unit | US1A | US1B | US1D | US1G | US1J | US1K | US1M |
| Device marking code | US1A | US1B | US1D | US1G | US1J | US1K | US1M | ||
| Maximum Repetitive Peak Reverse Voltage | VRRM | V | 50 | 100 | 200 | 400 | 600 | 800 | 1000 |
| Maximum RMS Voltage | VRMS | V | 35 | 70 | 140 | 280 | 420 | 560 | 700 |
| Maximum DC blocking Voltage | VDC | V | 50 | 100 | 200 | 400 | 600 | 800 | 1000 |
| Maximum Average Forward Rectified Current @ 60Hz sinewave, Resistance load,TL (Fig.1) | IF(AV) | A | 1.0 | ||||||
| Non-repetitive Peak Forward Surge Current @ t=8.3ms Half-sine wave | IFSM | A | 30.0 | ||||||
| Storage temperature | Tstg | -55 ~+150 | |||||||
| Junction temperature | Tj | -55 ~+150 | |||||||
| Typical Thermal Resistance (Junction to Ambient) | RJ-A | /W | 80 | ||||||
| Typical Thermal Resistance (Junction to Lead) | RJ-L | /W | 30 | ||||||
| Maximum instantaneous forward voltage (IF=1.0A) | VF | V | 1.0 | 1.4 | 1.7 | ||||
| Maxinum reverse recovery time (IF=0.5A,IR=1.0A,Irr=0.25A) | Trr | ns | 50 | 75 | |||||
| Maximum DC reverse currentat rated DC blocking voltage (VR=VDC,TA=25) | IR1 | A | 5.0 | ||||||
| Maximum DC reverse currentat rated DC blocking voltage (VR=VDC,TA=100) | IR2 | A | 500 | ||||||
| Typical junction capacitance (4.0V DC,1MHz) | CJ | pF | 20 | ||||||
2506261420_R-O-US1M_C7420317.pdf
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