Durable 600V N Channel MOSFET OSEN OSH25N60 designed for switch mode power supplies and lamp ballasts
Key Attributes
Model Number:
OSH25N60
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
25A
RDS(on):
190mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF
Input Capacitance(Ciss):
4.3nF
Output Capacitance(Coss):
1.25nF
Pd - Power Dissipation:
285W
Gate Charge(Qg):
55nC@10V
Mfr. Part #:
OSH25N60
Package:
TO-3PNB
Product Description
Product Overview
The OSH25N60 is a 600V N-Channel MOSFET from OSEN, designed for high efficiency and ruggedness. It features fast switching speeds, high input impedance, low-level drive capability, and tested avalanche energy. This MOSFET is ideal for applications such as high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Publication Order Number: OSH25N60
- Revision: Rev 21.2.10
- Package Type: TO-3PNB
Technical Specifications
| Symbol | Parameters | Ratings | Unit | Conditions |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| VDSS | Drain-Source Voltage | 600 | V | |
| VGS | Gate-Source Voltage-Continuous | ±30 | V | |
| ID | Drain Current-Continuous (Note 2) | 25 | A | |
| IDM | Drain Current-Single Pulsed (Note 1) | 100 | A | |
| PD | Power Dissipation (Note 2) | 285 | W | |
| Tj Max. | Operating junction temperature | 150 | ||
| Electrical Characteristics | ||||
| Static Characteristics | ||||
| BVDSS | Drain-Source Breakdown Voltage Current (Note 1) | 600 | V | ID=250µA, VGS=0V, TJ=25°C |
| VGS(th) | Gate Threshold Voltage | 2.0 -- 4.0 | V | VDS=VGS, ID=250µA |
| RDS(on) | Drain-Source On-Resistance | -- 0.19 -- | Ω | VGS=10V, ID=3A |
| IGSS | Gate-Body Leakage Current | -- -- ±100 | nA | VGS=±30V, VDS=0 |
| IDSS | Zero Gate Voltage Drain Current | -- -- 1 | µA | VDS=600V, VGS=0 |
| gfs | Forward Transconductance | -- 18 -- | S | VDS=50V, ID=12A |
| Switching Characteristics | ||||
| Td(on) | Turn-On Delay Time | -- 60 -- | ns | VDS=300V, ID=25A, RG=25Ω (Note 2) |
| Tr | Rise Time | -- 120 -- | ns | |
| Td(off) | Turn-Off Delay Time | -- 210 -- | ns | |
| Tf | Fall Time | -- 75 -- | ns | |
| Qg | Total Gate Charge | -- 55 -- | nC | VDS=480V, VGS=10V, ID=25A (Note 2) |
| Qgs | Gate-Source Charge | -- 15 -- | nC | |
| Qgd | Gate-Drain Charge | -- 20 -- | nC | |
| Dynamic Characteristics | ||||
| Ciss | Input Capacitance | -- 4300 -- | pF | VDS=25V, VGS=0, f=1MHz |
| Coss | Output Capacitance | -- 1250 -- | pF | |
| Crss | Reverse Transfer Capacitance | -- 55 -- | pF | |
| IS | Continuous Drain-Source Diode Forward Current (Note 2) | -- -- 25 | A | |
| VSD | Diode Forward On-Voltage | -- -- 1.2 | V | IS=3A, VGS=0 |
| Rth(j-c) | Thermal Resistance, Junction to Case | -- -- 0.44 | °C/W | |
2410121732_OSEN-OSH25N60_C20607792.pdf
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