Low Forward Voltage Bridge Rectifier PANJIT GBU2008LV T0 00601 Compact GBU2 Package for Power Boards
Key Attributes
Model Number:
GBU2008LV_T0_00601
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
400A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
920mV@10A
Current - Rectified:
20A
Voltage - DC Reverse(Vr):
800V
Mfr. Part #:
GBU2008LV_T0_00601
Product Description
Product Overview
The GBU2008LV is a glass-passivated low forward voltage bridge rectifier designed for high-efficiency power applications. It features a low forward voltage drop, making it ideal for computing power, game consoles, server power, air conditioner outdoor power boards, and home appliance power boards. Compliant with EU RoHS 2.0 and Halogen-free standards, it offers reliable performance and a compact GBU-2 package.
Product Attributes
- Brand: Panjit International Inc.
- Certifications: EU RoHS 2.0, IEC 61249 standard (Halogen-free)
- Material: Glass Passivated Chip Junction
- Package: GBU-2
Technical Specifications
| Parameter | Symbol | Value | Units | Test Condition |
| Maximum Repetitive Peak Reverse Voltage | VRRM | 800 | V | |
| Maximum RMS Voltage | VRMS | 560 | V | |
| Maximum DC Blocking Voltage | VDC | 800 | V | |
| Maximum Average Forward Current | IF(AV) | 20 | A | With heatsink |
| 3.5 | A | Without heatsink | ||
| Peak Forward Surge Current (8.3 ms Single Half Sine-Wave) | IFSM | 400 | A | @ TA = 25 C |
| 320 | A | @ TA = 125 C | ||
| Peak Forward Surge Current (1.0 ms Single Half Sine-Wave) | IFSM | 800 | A | @ TA = 25 C |
| 640 | A | @ TA = 125 C | ||
| It rating for fusing (t = 8.3ms) | It | 664 | AS | |
| Typical Junction Capacitance | CJ | 140 | pF | Measured at 1 MHz And Applied VR = 4 V |
| Typical Thermal Resistance | RJA, RJL, RJC | 5 | C/W | (with heatsink) |
| 3 | C/W | (with heatsink) | ||
| 2 | C/W | (with heatsink) | ||
| Operating junction and storage temperature range | TJ, TSTG | -55~150 | C | |
| Mounting torque | Tor | 8 | Kg.cm | Recommend torque: 5Kg.cm |
| Forward Voltage | VF | 0.92 | V | IF = 10 A, TJ = 25 C |
| 0.82 | V | IF = 10 A, TJ = 125 C | ||
| Reverse Current | IR | 5 | uA | VR = 800 V, TJ = 25 C |
| 100 | uA | VR = 800 V, TJ = 125 C |
2411261506_PANJIT-GBU2008LV-T0-00601_C19845025.pdf
Related Products
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
