PNP transistor with epitaxial planar die PAKER PMBT4403 halogen free RoHS compliant in SOT23 package
Key Attributes
Model Number:
PMBT4403
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
200MHz
Type:
PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
PMBT4403
Package:
SOT-23
Product Description
Product Overview
The PMBT4403 is a PNP Epitaxial planar die construction transistor in a SOT-23 Small Outline Plastic Package. It is halogen-free and RoHS compliant, offering industry-standard packaging for various electronic applications.
Product Attributes
- Brand: (Parker Microelectronics)
- Origin: Shenzhen, China
- Material: Epoxy UL: 94V-0
- Certifications: Halogen free, RoHS compliant
- Package: SOT-23 Small Outline Plastic Package
- Packing: Tape/Reel, 7" reel, 3000 pcs/reel, EIA-481-1
- Marking: 2T
Technical Specifications
| Symbol | Parameter | Test Condition | Min | Max | Unit | |
| Electrical Characteristics | Collector-base breakdown voltage | ICBO=-100uA, IE=0 | -40 | V | ||
| Collector-emitter breakdown voltage | IC=-1mA, IB=0 | -40 | V | |||
| Emitter-base breakdown voltage | IE=-100uA, IC=0 | -5 | V | |||
| Collector cut-off current | VCB=-35V, IE=0 | -100 | nA | |||
| Collector cut-off current | VCE=-35V, VEB(off)=-0.4V | -100 | nA | |||
| Emitter cut-off current | VEB=-4V, IC=0 | -100 | nA | |||
| DC current gain | hFE(1) | VCE=-1V, IC=-0.1mA | 30 | |||
| hFE(2) | VCE=-1V, IC=-1mA | 60 | ||||
| hFE(3) | VCE=-1V, IC=-10mA | 100 | ||||
| hFE(4) | VCE=-2V, IC=-150mA | 300 | ||||
| hFE(5) | VCE=-2V, IC=-500mA | 100 | ||||
| Collector-emitter saturation voltage | VCE(sat) | IC=-150mA, IB=-15mA | -0.40 | V | ||
| IC=-500mA, IB=-50mA | -0.75 | V | ||||
| Base-emitter saturation voltage | VBE(sat) | IC=-150mA, IB=-15mA | -0.95 | V | ||
| IC=-500mA, IB=-50mA | -1.30 | V | ||||
| Transition frequency | fT | VCC=-30V, IC=-150mA, IB1=IB2=-15mA | 225 | MHz | ||
| Switching times | Delay time | VCC=-30V, VBE(off)=-0.5V, IC=-150mA, IB1=-15mA | 60 | nS | ||
| Rise time | VCE=-10V, IC=-20mA,f=100MHz | 15 | 20 | nS | ||
| Storage time | ts | VCC=-30V, VBE(off)=-0.5V, IC=-150mA, IB1=-15mA | 15 | 20 | nS | |
| Fall time | tf | VCC=-30V, VBE(off)=-0.5V, IC=-150mA, IB1=-15mA | 15 | 20 | nS | |
| Maximum Ratings & Thermal Characteristics | VCBO | Collector-Base Voltage | -40 | V | ||
| VCEO | Collector-Emitter Voltage | -40 | V | |||
| VEBO | Emitter-Base Voltage | -5 | V | |||
| IC | Collector Current-Continuous | -600 | mA | |||
| PC | Collector Power Dissipation | 300 | mW | |||
| Tj | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature | -55-+150 | ||||
| RJA | Thermal resistance From junction to ambient | 417 | /W |
2409302201_PAKER-PMBT4403_C5278909.pdf
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