Low Forward Voltage Drop and High Current PAKER SS10L45C Trench MOS Barrier Schottky Rectifier Device
Key Attributes
Model Number:
SS10L45C
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
280A
Reverse Leakage Current (Ir):
150uA@45V
Operating Junction Temperature Range:
-40℃~+150℃
Voltage - DC Reverse (Vr) (Max):
45V
Voltage - Forward(Vf@If):
450mV@10A
Current - Rectified:
10A
Mfr. Part #:
SS10L45C
Package:
SMC
Product Description
Product Overview
The SS10L45C is a Trench MOS Barrier Schottky Rectifier featuring low forward voltage drop, low power losses, and high current capability. Its advanced trench technology and extremely low thermal resistance ensure high efficiency operation. This rectifier is glass passivated, halogen-free, and RoHS compliant, making it suitable for various applications requiring efficient power conversion.
Product Attributes
- Brand: (Pakermicro)
- Origin: Shenzhen, China
- Material: Molded Plastic, Glass Passivated Junction
- Color: Color band denotes cathode end
- Certifications: Halogen free and RoHS compliant
- Package: SMC (DO-214AB)
- Mounting: ANY
- Packing: SMC Tape/Reel, 13" reel, 3000 pcs per reel (EIA-481-1)
Technical Specifications
| Parameter | Symbol | Limit | Unit | Typical Value (TJ=25C unless otherwise specified) |
| Maximum repetitive peak reverse voltage | VRRM | 45 | V | |
| Maximum average forward rectified current | IF(AV) | 10 | A | |
| Peak forward surge current (8.3 ms single half sine-wave) | IFSM | 280 | A | |
| Operating junction and storage temperature range | TJ, TSTG | -40 to +150 | C | |
| Typical thermal resistance per diode (Mounted on FR-4 PCB) | RJA | C/W | 25 | |
| Instantaneous forward voltage per diode (IF=5A) | VF(1) | TYP. 0.3, MAX. 0.35 | V | |
| Instantaneous forward voltage per diode (IF=10A) | VF(1) | TYP. 0.39, MAX. 0.45 | V | |
| Instantaneous reverse current per diode at rated reverse voltage (TJ=25C) | IR(2) | 150 | uA | |
| Instantaneous reverse current per diode at rated reverse voltage (TJ=125C) | IR(2) | 50 | mA |
2412311646_PAKER-SS10L45C_C42432513.pdf
Related Products
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
