50V N Channel Enhancement Mode MOSFET PANJIT PJT138K R1 00001 with Trench Process and RoHS Compliance
Key Attributes
Model Number:
PJT138K_R1_00001
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
360mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.5Ω@2.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
2 N-Channel
Output Capacitance(Coss):
20pF
Input Capacitance(Ciss):
50pF
Pd - Power Dissipation:
236mW
Gate Charge(Qg):
1nC@4.5V
Mfr. Part #:
PJT138K_R1_00001
Package:
SOT-363
Product Description
Product Overview
The PPJT138K is a 50V N-Channel Enhancement Mode MOSFET featuring ESD protection. It is designed with advanced trench process technology, making it ideal for battery-operated systems, solid-state relays, and drivers for relays, displays, and memories. This MOSFET offers low on-state resistance at various gate-source voltages and drain currents, ensuring efficient operation. It is ESD protected up to 2KV HBM and compliant with EU RoHS 2011/65/EU directive and IEC61249 Std. (Halogen Free).
Product Attributes
- Brand: Panjit International Inc. (implied by disclaimer and part number format)
- Package Type: SOT-363
- Certifications: EU RoHS 2011/65/EU directive, IEC61249 Std. (Halogen Free)
- ESD Protection: 2KV HBM
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V, ID=500mA | - | 0.96 | 1.6 | |
| VGS=4.5V, ID=200mA | - | 1.25 | 2.5 | |||
| VGS=2.5V, ID=100mA | - | 2.73 | 4.5 | |||
| Static Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 50 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 0.8 | 1.0 | 1.5 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=50V, VGS=0V | - | 0.01 | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=+20V, VDS=0V | - | +3.0 | +10 | uA |
| Total Gate Charge | Qg | VDS=25V, ID=250mA, VGS=4.5V | - | 0.63 | 1 | nC |
| Gate-Source Charge | Qgs | VDS=25V, ID=250mA, VGS=4.5V | - | 0.2 | - | |
| Gate-Drain Charge | Qg | VDS=25V, ID=250mA, VGS=4.5V | - | 0.23 | - | |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHZ | - | 25 | 50 | pF |
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1.0MHZ | - | 9.5 | 20 | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHZ | - | 2.1 | 5 | pF |
| Turn-On Delay Time | td(on) | VDD=25V, ID=500mA, VGS=10V, RG=6 | - | 2.2 | 5 | ns |
| Turn-On Rise Time | tr | VDD=25V, ID=500mA, VGS=10V, RG=6 | - | 19.2 | 38 | ns |
| Turn-Off Delay Time | td(off) | VDD=25V, ID=500mA, VGS=10V, RG=6 | - | 6.2 | 12 | ns |
| Turn-Off Fall Time | tf | VDD=25V, ID=500mA, VGS=10V, RG=6 | - | 23 | 50 | ns |
| Drain-Source Diode Forward Current | IS | - | - | 500 | mA | |
| Diode Forward Voltage | VSD | IS=500mA, VGS=0V | - | 0.86 | 1.5 | V |
| Continuous Drain Current | ID | TA=25oC | - | - | 360 | mA |
| Pulsed Drain Current | IDM | - | - | 1200 | mA | |
| Power Dissipation | PD | TA=25oC | - | - | 236 | mW |
| Derate above 25oC | - | - | 1.89 | mW/ oC | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | - | 150 | oC | |
| Typical Thermal Resistance (Junction to Ambient) | RJA | (Note 3) | - | 530 | - | oC/W |
2410121332_PANJIT-PJT138K-R1-00001_C391661.pdf
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