P Channel Enhancement Mode MOSFET PANJIT PJA3441 R1 00001 40V for PWM and load switching applications

Key Attributes
Model Number: PJA3441_R1_00001
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
3.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
108mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
33pF
Number:
1 P-Channel
Output Capacitance(Coss):
48pF
Input Capacitance(Ciss):
505pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
6nC@4.5V
Mfr. Part #:
PJA3441_R1_00001
Package:
SOT-23
Product Description

Product Overview

The 40V P-Channel Enhancement Mode MOSFET, model PPJA3441, is designed for efficient load switching and PWM applications. It features advanced trench process technology, low on-resistance (RDS(ON)), and is compliant with EU RoHS 2011/65/EU and IEC61249 standard for green molding compound (Halogen Free). This MOSFET is housed in a compact SOT-23 package.

Product Attributes

  • Brand: Panjit International Inc.
  • Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free)
  • Material: Green molding compound
  • Color: Not specified
  • Origin: Not specified

Technical Specifications

ParameterSymbolTest ConditionMin.Typ.Max.Units
Static Drain-Source Breakdown VoltageBVDSSVGS=0V, ID=-250uA-40--V
Gate Threshold VoltageVGS(th)VDS=VGS, ID=-250uA-1.0-1.5-2.5V
Drain-Source On-State ResistanceRDS(on)VGS=-10V, ID=-3.1A-7488m
Drain-Source On-State ResistanceRDS(on)VGS=-4.5V, ID=-2.6A-88108m
Zero Gate Voltage Drain CurrentIDSSVDS=-40V, VGS=0V--0.01-1uA
Gate-Source Leakage CurrentIGSSVGS=+20V, VDS=0V-+10+100nA
Total Gate ChargeQgVDS=-20V, ID=-3.1A, VGS=-4.5V-6-nC
Gate-Source ChargeQgs-1.6-
Gate-Drain ChargeQg-2.3-
Input CapacitanceCissVDS=-20V, VGS=0V, f=1.0MHZ-505-pF
Output CapacitanceCoss-48-
Reverse Transfer CapacitanceCrss-33-
Turn-On Delay Timetd(on)VDD=-20V, ID=-2.5A, VGS=-10V, RG=1-6-ns
Turn-On Rise Timetr-35-
Turn-Off Delay Timetd(off)-18-
Turn-Off Fall Timetf-10-
Maximum Continuous Drain-Source Diode Forward CurrentIS-----1.0A
Diode Forward VoltageVSDIS=-1.0A, VGS=0V--0.82-1.2V
Reverse Recovery TimetrrVGS=0V, IS=-2.5A dIF/ dt=100A/us-13-ns
Reverse Recovery ChargeQrr-8.7-nC
Drain-Source VoltageVDS-40--V
Gate-Source VoltageVGS+20--V
Continuous Drain CurrentID-3.1--A
Pulsed Drain CurrentIDM(Note 4)-12.4--A
Power DissipationPDTa=25oC-1.25-W
Derate above 25oC-10-mW/ oC
Operating Junction and Storage Temperature RangeTJ,TSTG-55~150oC
Typical Thermal resistance - Junction to AmbientRJA(Note 3)-100-oC/W

2410121341_PANJIT-PJA3441-R1-00001_C313504.pdf

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