N Channel Enhancement Mode Power MOSFET PAKER SI2312 with Ultra Low On Resistance in SOT 23 Package
Key Attributes
Model Number:
SI2312
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-50℃~+150℃
RDS(on):
15mΩ@4.5V,5A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
120pF
Number:
1 N-channel
Pd - Power Dissipation:
1.25W
Input Capacitance(Ciss):
885pF
Gate Charge(Qg):
11nC
Mfr. Part #:
SI2312
Package:
SOT-23
Product Description
Product Overview
The SI2312 is an N-Channel Enhancement Mode Power MOSFET in a SOT-23 package. It features a high-density cell design for ultra-low on-resistance and is manufactured using advanced trench process technology. This MOSFET is halogen-free and RoHS compliant, making it suitable for various electronic applications.
Product Attributes
- Brand:
- Origin: Shenzhen, China
- Package: SOT-23 Small Outline Plastic Package
- Certifications: UL: 94V-0, Halogen free and RoHS compliant
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| Maximum Ratings & Thermal Characteristics | ||||||
| VDS | Drain-Source Breakdown Voltage | VGS=0VID=250A | 20 | -- | -- | V |
| VGS | Gate-Source Voltage | -- | -- | -- | ±10 | V |
| TJ | Maximum Junction Temperature | -- | -- | -- | 150 | °C |
| TSTG | Storage Temperature Range | -- | -50 | -- | 155 | °C |
| IDM | Pulse Drain Current | Tc=25°C | -- | -- | 25 | A |
| ID | Tested Continuous Drain Current@GS=10V | Tc=25°C | -- | -- | 6 | A |
| PD | Maximum Power Dissipation | Tc=25°C | -- | -- | 1.25 | W |
| RθJA | Thermal Resistance Junction-to-Ambient @ Steady State | -- | -- | 100 | -- | °C/ W |
| Electrical Characteristics | ||||||
| IDSS | Zero Gate Voltage Drain Current | VDS=20VVGS=0V | -- | -- | 1 | µA |
| IGSS | Gate-Body Leakage Current | VGS=±10VVDS=0V | -- | -- | ±100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGSID=250µA | 0.45 | 0.7 | 1 | V |
| RDS(on) | Drain-Source On-State Resistance | VGS=4.5VID=5.0A | -- | 0.45 | -- | mΩ |
| RDS(on) | Drain-Source On-State Resistance | VGS=2.5VID=2.5A | -- | 0.7 | 1 | V |
| CISS | Input Capacitance | VDS=10VVGS=0V f=1MHz | -- | 885 | -- | pF |
| COSS | Output Capacitance | VDS=10VVGS=0V f=1MHz | -- | 135 | -- | pF |
| CRSS | Reverse Transfer Capacitance | VDS=10VVGS=0V f=1MHz | -- | 120 | -- | pF |
| Qg | Total Gate Charge | VDS=10VID=6A VGS=4.5V | -- | 11 | -- | nC |
| Qgs | Gate Source Charge | VDS=10VID=6A VGS=4.5V | -- | 1.75 | -- | nC |
| Qgd | Gate Drain Charge | VDS=10VID=6A VGS=4.5V | -- | 3 | -- | nC |
| td(on) | Turn-on Delay Time | VDD=10VRL=1.5Ω VGS=4.5VRG=3Ω | -- | 7 | -- | nS |
| tr | Turn-on Rise Time | VDD=10VRL=1.5Ω VGS=4.5VRG=3Ω | -- | 45 | -- | nS |
| td(off) | Turn-Off Delay Time | VDD=10VRL=1.5Ω VGS=4.5VRG=3Ω | -- | 30 | -- | nS |
| tf | Turn-Off Fall Time | VDD=10VRL=1.5Ω VGS=4.5VRG=3Ω | -- | 50 | -- | nS |
| Source- Drain Diode Characteristics | ||||||
| VSD | Forward on voltage | Tj=25°CIs=3.6A | -- | -- | 1.2 | V |
2410122013_PAKER-SI2312_C5278891.pdf
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