30V N Channel MOSFET PANJIT PJA3406 R1 00001 designed for switch load and PWM electronic applications

Key Attributes
Model Number: PJA3406_R1_00001
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
70mΩ@4.5V,2.8A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
24pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
1.25W
Input Capacitance(Ciss):
235pF@15V
Gate Charge(Qg):
5.8nC@15V
Mfr. Part #:
PJA3406_R1_00001
Package:
SOT-23
Product Description

Product Overview

The PPJA3406 is a 30V N-Channel Enhancement Mode MOSFET designed for switch load, PWM applications, and solid-state relays. It features advanced trench process technology for improved performance and is compliant with EU RoHS 2011/65/EU directive and IEC61249 standard for green molding compound (Halogen Free). This MOSFET offers low on-resistance values at specified gate-source and drain-source conditions.

Product Attributes

  • Brand: Panjit International Inc.
  • Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free)
  • Material: Green molding compound
  • Origin: Not specified
  • Color: Not specified

Technical Specifications

ParameterSymbolTest ConditionMin.Typ.Max.Units
Drain-Source Breakdown VoltageBVDSSVGS=0V, ID=250uA30--V
Gate Threshold VoltageVGS(th)VDS=VGS, ID=250uA1.01.372.1V
Drain-Source On-State ResistanceRDS(on)VGS=10V, ID=4.4A-3548m
VGS=4.5V, ID=2.8A-5170m
Zero Gate Voltage Drain CurrentIDSSVDS=30V, VGS=0V-0.011uA
Gate-Source Leakage CurrentIGSSVGS=+20V, VDS=0V-+10+100nA
Total Gate ChargeQgVDS=15V, ID=4.4A, VGS=10V (Note 1,2)-5.8-nC
Gate-Source ChargeQgs-1-
Gate-Drain ChargeQg d-1-
Input CapacitanceCissVDS=15V, VGS=0V, f=1.0MHZ-235-pF
Output CapacitanceCoss-36-
Reverse Transfer CapacitanceCrss-24-
Switching Characteristicstd(on)VDD=15V, ID=4.4A, VGS=10V, RG=6 (Note 1,2)-3-ns
tr-39-
td(off)-23-
tf-28-
Drain-Source Diode Forward CurrentIS--1.5A
Diode Forward VoltageVSDIS=1.0A, VGS=0V-0.771.2V

Maximum Ratings and Thermal Characteristics

ParameterSymbolLimitUnitsNote
Drain-Source VoltageVDS30V
Gate-Source VoltageVGS+20V
Continuous Drain CurrentID4.4A
Pulsed Drain CurrentIDM17.6A
Power DissipationPD1.25WTa=25oC
Derate above 25oC10mW/ oC
Operating Junction and Storage Temperature RangeTJ,TSTG-55~150oC
Typical Thermal resistance - Junction to AmbientRJA100oC/WNote 3

2410121332_PANJIT-PJA3406-R1-00001_C5356095.pdf

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