60V P Channel MOSFET PANJIT PJA3439 with Low On Resistance and RoHS Compliant Halogen Free Packaging
Key Attributes
Model Number:
PJA3439
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
RDS(on):
13Ω@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.2pF
Number:
1 P-Channel
Output Capacitance(Coss):
15pF
Input Capacitance(Ciss):
51pF
Pd - Power Dissipation:
500mW
Gate Charge(Qg):
1.1nC@4.5V
Mfr. Part #:
PJA3439
Package:
SOT-23
Product Description
Product Overview
This 60V P-Channel Enhancement Mode MOSFET in a SOT-23 package offers advanced trench process technology. It is specially designed for applications such as relay drivers and speed line drives. The device features low on-resistance and is compliant with EU RoHS 2011/65/EU directive and IEC61249 Std. (Halogen Free) green molding compound.
Product Attributes
- Brand: Panjit International Inc.
- Package: SOT-23
- Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free)
- Marking: A39
Technical Specifications
| Parameter | Symbol | Test Condition | Limit | Units |
| Drain-Source Voltage | VDS | -60 | V | |
| Gate-Source Voltage | VGS | +20 | V | |
| Continuous Drain Current | ID | -300 | mA | |
| Pulsed Drain Current | IDM | -1000 | mA | |
| Power Dissipation | PD | TA=25oC | 500 | mW |
| Derate above 25oC | 4 | mW/ oC | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55~150 | oC | |
| Typical Thermal Resistance - Junction to Ambient (Note 3) | RJA | 250 | oC/W | |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,ID=-250uA | -60 | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250uA | -1.0 to -2.5 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=-10V,ID=-500mA | <4 | |
| Drain-Source On-State Resistance | RDS(on) | VGS=-4.5V,ID=-200mA | <6 | |
| Drain-Source On-State Resistance | RDS(on) | VGS=-2.5V,ID=-50mA | <13 | |
| Zero Gate Voltage Drain Current | IDSS | VDS=-48V,VGS=0V | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=+20V,VDS=0V | +100 | nA |
| Total Gate Charge | Qg | VDS=-25V, ID=-100mA, VGS=-4.5V | 1.1 | nC |
| Gate-Source Charge | Qgs | 0.3 | ||
| Gate-Drain Charge | Qg d | 0.2 | ||
| Input Capacitance | Ciss | VDS=-25V, VGS=0V, f=1.0MHZ | 51 | pF |
| Output Capacitance | Coss | 15 | ||
| Reverse Transfer Capacitance | Crss | 2.2 | ||
| Turn-On Delay Time | td(on) | VDD=-25V, ID=-100mA, VGS=-10V, RG=6 (Note 1,2) | 4.8 | ns |
| Turn-On Rise Time | tr | 19 | ||
| Turn-Off Delay Time | td(off) | 52 | ||
| Turn-Off Fall Time | tf | 32 | ||
| Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current | IS | -300 | mA | |
| Diode Forward Voltage | VSD | IS=-500mA, VGS=0V | -0.95 to -1.3 | V |
2410121332_PANJIT-PJA3439_C2844879.pdf
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