Low On Resistance MOSFET PANJIT 2N7002KW AU R1 000A1 Suitable for Solid State Relays and Memory Applications
Key Attributes
Model Number:
2N7002KW-AU_R1_000A1
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
250mA
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
3Ω@10V,500mA
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
8pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
24pF@25V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
800pC@5V
Mfr. Part #:
2N7002KW-AU_R1_000A1
Package:
SOT-323
Product Description
Product Overview
The P2N7002KW-AU is a 60V N-Channel Enhancement Mode MOSFET featuring ESD protection. It offers ultra-low on-resistance due to its advanced trench process technology and high-density cell design. This MOSFET is specifically designed for battery-operated systems and solid-state relays, making it suitable for driving relays, displays, and memories. It boasts very low leakage current in the off condition and is AEC-Q101 qualified.
Product Attributes
- Brand: Panjit International Inc.
- Certifications: AEC-Q101 qualified, Lead free in compliance with EU RoHS 2.0, Green molding compound as per IEC 61249 standard
- ESD Protection: 2KV HBM
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units | |
| Drain-Source Voltage | VDS | 60 | V | ||||
| Gate-Source Voltage | VGS | +20 | V | ||||
| Continuous Drain Current | ID | 250 | mA | ||||
| Pulsed Drain Current | IDM | 1000 | mA | ||||
| Power Dissipation | PD | Ta=25oC | 350 | mW | |||
| Derate above 25oC | 2.8 | mW/ oC | |||||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | oC | |||
| Typical Thermal Resistance - Junction to Ambient (Note 3) | RJA | 357 | oC/W | ||||
| Static Drain-Source Breakdown Voltage | BVDSS | VGS=0V,ID=10uA | 60 | - | - | V | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1 | - | 2.5 | V | |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V,ID=500mA | - | - | 3 | ||
| Drain-Source On-State Resistance | RDS(on) | VGS=4.5V,ID=200mA | - | - | 4 | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | - | - | 1 | uA | |
| Gate-Source Leakage Current | IGSS | VGS=+20V,VDS=0V | - | - | +10 | nA | |
| Forward Transconductance | gfs | VDS=15V, ID=250mA | 100 | - | - | mS | |
| Total Gate Charge | Qg | VDS=15V, ID=250mA, VGS=5V (Note 1,2) | - | 0.8 | - | nC | |
| Gate-Source Charge | Qgs | - | 0.35 | - | |||
| Gate-Drain Charge | Qg d | - | 0.2 | - | |||
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHZ | - | 24 | - | pF | |
| Output Capacitance | Coss | - | 13 | - | pF | ||
| Reverse Transfer Capacitance | Crss | - | 8 | - | pF | ||
| Turn-On Delay Time | td(on) | VDD=30V, ID=200mA, VGS=10V, RG=10 (Note 1,2) | - | 3 | - | ns | |
| Turn-On Rise Time | tr | - | 19 | - | ns | ||
| Turn-Off Delay Time | td(off) | - | 15 | - | ns | ||
| Turn-Off Fall Time | tf | - | 23 | - | ns | ||
| Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current | IS | --- | - | - | 250 | mA | |
| Diode Forward Voltage | VSD | IS=200mA, VGS=0V | - | 0.82 | 1.3 | V |
2411220718_PANJIT-2N7002KW-AU-R1-000A1_C6997133.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
