N Channel Enhancement Silicon MOSFET PANASONIC 2SK669 Suitable for High Speed Switching Applications
SANYO 2SK669 N-Channel Enhancement Silicon MOSFET
The SANYO 2SK669 is a very high-speed switching N-Channel Enhancement Silicon MOSFET designed for analog switch and ultrahigh-speed switch applications, including low-pass filters. It features large |yfs|, enhancement type, and small ON resistance.
Product Attributes
- Brand: SANYO
- Product Code: 2SK669
- Type: N-Channel Enhancement Silicon MOSFET
- Origin: JAPAN (Tokyo Office)
Technical Specifications
| Parameter | Unit | Conditions | Value | Notes |
| VDS | V | 50 | Drain to Source Voltage | |
| VGS | V | ±12 | Gate to Source Voltage | |
| ID | A | 0.1 | Drain Current | |
| IDP | A | (pulse) | 0.3 | Pulsed Drain Current |
| PD | W | 0.2 | Allowable Power Dissipation | |
| Tch | °C | 150 | Channel Temperature | |
| Tstg | °C | -55 to +150 | Storage Temperature | |
| VDS(BR)DSS | V | ID = 10 μA, VGS = 0 | 50 | Drain to Source Breakdown Voltage |
| IGSS | μA | VGS = ±10 V, VDS = 0 | 1.0 | Gate Leakage Current |
| IDSS | μA | VDS = 20 V, VGS = 0 | 0.1 | Drain Leakage Current |
| VGS(off) | V | ID = 0.1 mA, VDS = 10 V | 1.0 | Cut-off Voltage |
| |yfs| | S (mS) | VDS = 10 V, ID = 50 mA, f = 1 kHz | 5.2 (5200) | Forward Transfer Transconductance |
| Ciss | pF | VDS = 10 V, VGS = 0, f = 1 MHz | 200 | Input Capacitance |
| Coss | pF | VDS = 10 V, VGS = 0, f = 1 MHz | 15 | Output Capacitance |
| Crss | pF | VDS = 10 V, VGS = 0, f = 1 MHz | 5.0 | Reverse Transfer Capacitance |
| RDS(on) | Ω | VDS = 10 V, ID = 10 mA, VGS = 10 V | 2.2 | Drain to Source ON Resistance |
Note: Specifications are subject to change without notice. Consult the "Delivery Specification" for the most current information.
2411200006_PANASONIC-2SK669_C17329326.pdf
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