General purpose NPN transistor PANJIT MMBT2222A-R1-00501 with 40V VCEO and RoHS compliant green molding compound
Key Attributes
Model Number:
MMBT2222A-R1-00501
Product Custom Attributes
Current - Collector Cutoff:
10nA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
225mW
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT2222A-R1-00501
Package:
SOT-23
Product Description
MMBT2222A NPN General Purpose Switching Transistor
The MMBT2222A is an NPN epitaxial silicon planar transistor designed for general purpose switching applications. It features a collector-emitter voltage of 40V and a continuous collector current of 600mA, making it suitable for various electronic circuits. This transistor is RoHS compliant and uses a green molding compound, adhering to environmental standards.
Product Attributes
- Brand: Panjit International Inc.
- Material: NPN epitaxial silicon, planar design
- Color: Green molding compound (Halogen Free)
- Certifications: EU RoHS 2011/65/EU directive compliant
- Case: SOT-23, Plastic
- Marking: M2A
Technical Specifications
| Parameter | Symbol | Value | Units | Conditions |
|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 40 | V | |
| Collector-Base Voltage | VCBO | 75 | V | |
| Emitter-Base Voltage | VEBO | 6 | V | |
| Collector Current - Continuous | IC | 600 | mA | |
| Max. Power Dissipation | PTOT | 225 | mW | (Note 1: Transistor mounted on FR-5 board 1 x 0.75 x 0.062 in.) |
| Thermal Resistance, Junction to Ambient | RJA | 556 | OC/W | |
| Junction Temperature | TJ | -55 to +150 | OC | |
| Storage Temperature | TSTG | -55 to +150 | OC | |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 40 | V | IC = 0.1mA |
| Collector-Base Breakdown Voltage | V(BR)CBO | 75 | V | IE = 0.1mA |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6 | V | IC = 0.1mA |
| Collector Cut-off Current | ICEX | 0.3 | A | VCE = 30V, VBE = 0.3V |
| Collector Cut-off Current | ICBO | 10 | nA | VCE = 60V, TJ = 150 OC |
| Emitter Cut-off Current | IEBO | 100 | nA | VBE = 0.3V, IC = 0 |
| DC Current Gain | hFE | 100 (Typ.) | VCE = 10V, IC = 0.1mA | |
| DC Current Gain | hFE | 100 to 300 | VCE = 10V, IC = 10mA | |
| DC Current Gain | hFE | 50 (Min.) | VCE = 10V, IC = 500mA | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 0.3 (Max.) | V | IC = 150mA, IB = 15mA (Note 2) |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 1.0 (Max.) | V | IC = 500mA, IB = 50mA (Note 2) |
| Base-Emitter Saturation Voltage | VBE(SAT) | 1.2 (Max.) | V | IC = 150mA, IB = 15mA (Note 2) |
| Base-Emitter Saturation Voltage | VBE(SAT) | 2.0 (Max.) | V | IC = 500mA, IB = 50mA (Note 2) |
| Base-Collector Capacitance | Cobo | 8 (Typ.) | pF | VCB = 10V, f = 1MHz, IE = 0 |
| Base-Emitter Capacitance | Cebo | 25 (Typ.) | pF | VEB = 0.5V, f = 1MHz, IC = 0 |
| Turn-On Time | ts | 10 (Max.) | ns | VCC = 3V, IC = 150mA, IB1 = 15mA, IB2 = -15mA (Note 2) |
| Storage Time | ts | 25 (Max.) | ns | VCC = 3V, IC = 150mA, IB1 = 15mA, IB2 = -15mA (Note 2) |
| Fall Time | tf | 60 (Max.) | ns | VCC = 3V, IC = 150mA, IB1 = 15mA, IB2 = -15mA (Note 2) |
2504101957_PANJIT-MMBT2222A-R1-00501_C35485048.pdf
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