General purpose PNP transistor PANJIT BC807-25 R1 00001 lead free SOT23 package green molding compound
Key Attributes
Model Number:
BC807-25_R1_00001
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
330mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
BC807-25_R1_00001
Package:
SOT-23
Product Description
BC807-16~BC807-40 PNP General Purpose Transistors
The BC807-16 to BC807-40 series are PNP epitaxial silicon planar design transistors suitable for general purpose amplifier applications. These devices are lead-free and compliant with EU RoHS2.0 directives, featuring a green molding compound as per IEC61249 standard (Halogen Free). They are housed in a SOT-23 plastic package.
Product Attributes
- Brand: Panjit International Inc.
- Material: Epitaxial Silicon, Planar Design
- Color: Green (Molding Compound)
- Certifications: EU RoHS2.0 (2011/65/EU & 2015/865/EU directive), IEC61249 Std. (Halogen Free)
Technical Specifications
| Parameter | Symbol | BC807-16 | BC807-25 | BC807-40 | Unit | |
| ELECTRICAL CHARACTERISTICS (TJ=25C, unless otherwise noted) | ||||||
| Collector-Emitter Breakdown Voltage (IC=-10mA, IB=0) | V(BR)CEO | -45 | V | |||
| Collector-Base Breakdown Voltage (VEB=0V, IC=-10A) | V(BR)CBO | -50 | V | |||
| Emitter-Base Breakdown Voltage (IE=-1A, Ic=0) | V(BR)EBO | -5.0 | V | |||
| Emitter-Base Cutoff Current (VEB=-5V) | IEBO | -100 | nA | |||
| Collector-Base Cutoff Current (VCB=-20V,IE=0) TJ =25C | ICBO | -100 | nA | |||
| Collector-Base Cutoff Current (VCB=-20V,IE=0) TJ =150C | ICBO | -5.0 | A | |||
| DC Current Gain (Ic=-100mA,VCE=-1V) | hFE | 100 | 160 | 250 | - | |
| DC Current Gain (Ic=-500mA,VCE=-1V) | hFE | 250 | 400 | 600 | - | |
| Collector-Emitter Saturation Voltage (Ic=-500mA ,IB=-50mA) | VCE(SAT) | -0.7 | V | |||
| Base-Emitter Voltage (Ic=-500mA,VCE=-1.0V) | VBE(ON) | -1.2 | V | |||
| Collector-Base Capacitance (VCB=-10v,IE=0,f=1MHz) | CCBO | 7.0 | pF | |||
| Current Gain-Bandwidth Product (Ic=-10mA,VCE=-5V,f=100MHz) | fT | 100 | MHz | |||
| POWER MECHANICAL DATA | ||||||
| Collector Current - Continuous | IC | -500 | mA | |||
| Peak Collector Current | ICM | -1000 | mA | |||
| Total Power Dissipation (Note 1) | PTOT | 330 | mW | |||
| Junction and Storage Temperature Range | TJ , TSTG | -55 to 150 | C | |||
| THERMAL CHARACTERISTICS | ||||||
| Thermal Resistance Junction to Ambient (Note 1) | RJA | 375 | C/W | |||
| Thermal Resistance Junction to Lead | RJL | 220 | C/W | |||
2410010401_PANJIT-BC807-25-R1-00001_C268455.pdf
Related Products
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
